ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Nanometric SnOx cluster-assembled films prepared by a plasma-gas-condensation clusterdeposition apparatus have been examined by transmission electron microscopy (TEM) and electricalresistance. TEM observation showed that those clusters were almost spherical andsize-monodispersive with a mean cluster size of 10 nm. The high-resolution TEM images indicatedthat the films were composed of randomly oriented nanocrystallites and that their surface roughnessretained the traces of the original SnOx clusters. The electrical resistance of the SnOxcluster-assembled film decreased with decreasing partial O2 gas pressure. This result suggests that theintergranular potential barriers were responsible for the resisitvity variation. The activation energyestimated from the temperature-dependent resistivity was 0.75 eV for 330 K 〈 T 〈 410 K under thepartial O2 gas pressure of 0.02 MPa
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.11-12.599.pdf
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