Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 2189-2194
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon layers implanted with 10 keV arsenic have been characterized using the differential Hall effect, secondary-ion-mass spectrometry, and Rutherford backscattering. Arsenic has been implanted to doses up to 2×1015 cm−2 and the layers have been annealed for 15 min at temperatures in the range 600–900 °C. The maximum free-carrier concentration and sheet resistance obtainable are 2.8×1014 cm−2 and 320 Ω/(D'Alembertian), respectively, for a dose of 1×1015 cm−2 annealed at 700 °C. There is evidence for both the loss of arsenic into a thin surface layer and the incomplete electrical activation of the arsenic remaining in the bulk. It is proposed that incomplete electrical activation is due to clustering in the amorphous phase during the solid-phase-epitaxial regrowth of the layer rather than clustering in the crystalline phase after the regrowth has occurred.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337979
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