ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Microstructures in p-CuInSe2 single crystals tailored by a strong electric field have been studied using the methods of local cathodoluminescence, electron-beam-induced current (EBIC), capacitance–voltage (C–V) characteristics, and deep-level transient spectroscopy (DLTS) spectra, and have been considered through a prism of elemental stability in the ternary compound. The shortest-wavelength cathodoluminescence radiation ((h-dash-bar)ωm=1.023 eV) is observed from a layer of n type, the longer-wavelength radiation ((h-dash-bar)ωm=1.01 and 0.973 eV), from p-type areas, both a p layer and the p-bulk crystal. The analysis of the spectra has allowed us to attribute experimental features to optical transitions associated with donor and acceptor levels of VCu, VSe, Cui point defects. The capacitance study by the C–V characteristics and DLTS spectra as well as the EBIC test have shown formation of diode-type or transistor-type microstructures. The |ND−NA| concentration profile, thermal activation, and emission energies of 22–25 and 170 meV, and a capture cross-section σh=2×10−19 cm2 of the deep donor level have been obtained for the microstructures. The two-stage resistive model has been considered for p–n and p–n–p junction formation. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366321
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