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  • 1
    Unknown
    The piezojunction effect in silicon integrated circuits and sensors (2002)
    Boston : Kluwer Academic Publishers
    The Kluwer international series in engineering and computer science  
    Details
    Keywords: Detectors. ; Integrated circuits. ; Piezoelectric devices.
    Pages: xii, 161 p.
    ISBN: 0-306-48210-X
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=99503
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    E-Book (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    A Cmos Interface for Thermocouples with Reference-Junction Compensation (1997)
    Springer
    Analog integrated circuits and signal processing 14 (1997), S. 235-248 
    Details
    ISSN: 1573-1979
    Keywords: thermocouple interface ; voltage processor ; dynamic voltage reference
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper presents a CMOS interface for a thermocouple, includingreference-junction compensation. The interface contains a first-orderoscillator whose period is modulated by the signal from the thermocouple(VX) and two other signals generated internally. One is abase-emitter voltage (VBE) and the other is a PTAT voltage(VPTAT). Linear combinations of the periods corresponding tothese two voltages are made by a µC, to obtain a reference signal anda temperature-dependent signal. The internal signals are required to provideauto-calibration for offset and gain and to measure the interface internaltemperature. Dynamic Element Matching is applied to generate an accurate andreliable PTAT voltage. The inaccuracy in the base-emitter voltage iscalibrated using a vertical PNP substrate transistor with multi-emitterareas. The applied modulator used in the circuit has a second-orderfiltering which suppresses low-frequency (1/f) noise. This filteringproperty enables the use of a low-cost CMOS process for the implementationof the circuit. The interface is able to measure a voltage(VX) in the range of −27 mV to 100 mV, the measuredaccuracy of the system over a temperature range of −25°C to75°C is 550 ppm of VX ± 2µV. The inaccuracyin determining the reference-junction temperature is 0.6 K. The measuringtime is ≤50 ms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008294019845
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    A new dithering method for sigma-delta modulators (1996)
    Springer
    Analog integrated circuits and signal processing 10 (1996), S. 193-204 
    Details
    ISSN: 1573-1979
    Keywords: ΣΔ modulators ; dithering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract A new dithering method to remove limit-cycles in Sigma-Delta modulators is presented. With this new method, the sequence length of a Pseudo-Noise generated dither is matched to the digital decimation filter. This causes the frequency spikes of the dither to coincide with the notches of the filter which results in total elimination of the applied dither power. In contrast to existing dithering techniques, matched dithering will not introduce additional inband noise. Compared to existing dithering techniques, the required dither amplitudes are relatively small (5%–30% FS) and may decrease with increasing oversampling ratio. Matched dithering proves to be very powerful for instrumentation applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00195563
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Low-Cost CMOS Interface for Capacitive Sensors and Its Application in a Capacitive Angular Encoder (1997)
    Springer
    Analog integrated circuits and signal processing 14 (1997), S. 223-233 
    Details
    ISSN: 1573-1979
    Keywords: sensor interface ; capacitance measurement ; capacitive sensor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract A low-cost CMOS integrated interface for capacitivesensors is presented. The interface is composed of two separatechips: a capacitance-controlled oscillator and a selector, whichresult in a structure that is able to measure several capacitancesaccurately and has a microcontroller-compatible output. In thisinterface, even large parasitic capacitances of up to 3 nF betweenthe terminals of the capacitor to be measured and ground areallowed. Prototypes of the interface chips have been fabricatedin a 0.7-µm CMOS process. The frequency of theoscillator amounts to 90 kHz. For the capacitance measurement,the interface has a resolution of 11.3 ppm and a nonlinearityof 300 ppm over a measurement range of 2 pF. In this paper, alsothe application of the interface in an accurate capacitive angularencoder is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008242003007
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    A Universal Transducer Interface for Capacitive and Resistive Sensor Elements (1997)
    Springer
    Analog integrated circuits and signal processing 14 (1997), S. 249-260 
    Details
    ISSN: 1573-1979
    Keywords: transducer interface ; smart sensor system ; smart sensor interface ; bridge interface ; captive interface ; universal transducer interface
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper presents a new universal transducer interface.This interface, which is read out by a microcontroller, servicesthe following sensor elements: capacitors, platinum resistors,thermistors, resistive bridges and potentiometers. The A/D conversionis based on a first-order oscillator. A combination of classicaland some new measurement techniques has been applied on a singlechip to obtain high accuracy, good long-term stability and areduction of the effects of interference and parasitic elements.The circuit has been fabricated in a 0.7 µm CMOSprocess. The main test results are: an accuracy of 10–15bits and a resolution up to 16 bits while the measurement timeis in the range 1–100ms. These results hold over the temperaturerange −20°C to 80°C. Calibrationof the electronic part is not required. The number of externalcomponents has been kept to a minimum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008246103915
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    Paper (German National Licenses)
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