Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 3266-3268
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
With the increasing annealing temperature in ultrahigh vacuum, hydrogen-terminated Si(001) surface exhibit a (1×2) reconstruction around 500 °C, c(4×4) in the narrow range of 580–750 °C, and a weak SiC transmission pattern above 750 °C. The simultaneous disappearance of c(4×4) and the appearance of the SiC pattern suggest that the c(4×4) reconstruction is associated with carbon contamination. The carbon concentration of 2.5×1018 atoms/cm3 is insufficient for carbon atoms to be a component of the c(4×4) structure, and therefore the carbon must be having another effect. A consequence of this conclusion is that carbon is not responsible for C-type defects. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120308
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