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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 837-842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complex conductivity of moderately P-doped silicon wafers (1.1±0.2 Ω cm at room temperature) has been measured by using a terahertz (THz) time-domain spectroscopy for the temperature and frequency ranges of 20–300 K and 0.2–1.1 THz, respectively. The strong frequency dependence of the complex conductivity due to the free carriers in the THz region is observed and it changes rapidly with temperature, which is interpreted in terms of the increase in mobility and freezing of the free carrier as analyzed by using the simple Drude model. The experimental data deviate slightly from the simple Drude model at low temperatures and becomes apparent with decreasing temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376673
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  • 2
    Electronic Resource
    Electronic Resource
    Vector imaging of supercurrent flow in YBa2Cu3O7−δ thin films using terahertz radiation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3387-3389 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrated the vector mapping of the supercurrent flow in YBa2Cu3O7−δ thin films using a terahertz (THz) radiation imaging system. A wire-grid polarizer was employed to detect the vector components of the THz radiation. The two THz radiation images obtained through the polarizer tilted by +45° and −45° with respect to the detector's orientation were successfully transferred into the vector image of the supercurrent distribution. The observed distributions in the current-biased and the vortex-penetrated films were qualitatively explained using Bean's critical-state model [E. H. Brandt and M. Indenbom, Phys. Rev. B 48, 12893 (1993)]. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125302
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  • 3
    Electronic Resource
    Electronic Resource
    Sub-THz spectroscopic system using a multimode laser diode and photoconductive antenna (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3772-3774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A system for measuring transmittance of electromagnetic waves in the sub-THz region is proposed. The electromagnetic radiation is generated by the excitation of a photoconductive antenna with a commercially available multimode laser diode. The spectral coverage of the radiation is increased by defocusing the light spot on the photoconductive antenna. Transmitted radiation is detected by a hot-electron bolometer through a Martin–Puplett-type interferometer. Transmittance is measured for n-type Si wafers with various doping levels. The carrier densities calculated from the transmittance agree well with those obtained from the dc conductivity measurement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125451
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  • 4
    Electronic Resource
    Electronic Resource
    A cross-correlation spectroscopy in subterahertz region using an incoherent light source (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1519-1521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A subterahertz (sub-THz) spectroscopic system using a multimode laser diode and photoconductive antennas (PA) has been proposed. It employs a random fluctuation of the light intensity to produce the subterahertz radiation from the emitter PA and also to trigger the detector PA. The signal is obtained as the cross correlation between the sub-THz radiation amplitude and laser light intensity. The decrease in the amplitude and phase delay of the radiation due to transmission from a sample can be calculated from the signal in a broad spectral region of sub-THz. This system is applied to the measurement of the complex refractive indices of Si wafers. The obtained dispersion of the refractive indices is well explained by the Drude model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126082
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3923-3925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of doped silicon wafers have been measured by means of terahertz time domain reflection spectroscopy. A method is proposed to obtain the relative phase by reflection accurately. By using this method, the relative phase is obtained within an error of less than 10 mrad at 1 THz. The experimentally obtained complex conductivity of relatively high-doped silicon (ρ=0.136 Ω cm) in the terahertz region agrees with the simple Drude model. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413498
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  • 6
    Electronic Resource
    Electronic Resource
    Luminescence study of O^-"2 centers in KBr under uniaxial stress
    Amsterdam : Elsevier
    Journal of Luminescence 59 (1994), S. 19-25 
    Details
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-2313(94)90017-5
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