Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 1691-1696
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
From the Boltzmann equation governing the electron–phonon interaction in a semiconductor, we derive an expression for the phonon-mediated carrier capture time in electrically pumped quantum well lasers. The result is used to study the influence of temperature, carrier density, and the width d of the quantum well on the carrier capture time. Contrary to the common belief that the capture time oscillates strongly with d, we find that such oscillations are heavily damped for typical structure parameters and could therefore be very difficult to resolve experimentally.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358514
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