ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the Fermi surfaces of In0.53Ga0.47As/In0.52Al0.48As superlattices with delta-doped barriers of different thicknesses, grown by molecular beam epitaxy. The experimental data were obtained by magnetotransport measurements in tilted magnetic fields and compared with calculations using the Kronig-Penney model [Proc. R. Soc. London, Ser. A 130, 499 (1931)]. For barrier widths above 4 nm, the coupling between the wells is small, and a predominantly two-dimensional behavior of the independent electron systems occurs. For barrier widths of 4 nm and below, an anisotropic three-dimensional behavior of the electrons was found, which is attributed to strong coupling between the wells. Due to the small barrier width for the onset of coupling, the in-plane components of the magnetic field up to 12 T are not sufficient to influence the shape of the Fermi surfaces. This is a consequence of the rather high conduction band offset of about 0.35 eV, which was estimated from our experimental data. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368030
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