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  • 1
    Electronic Resource
    Electronic Resource
    Room temperature epitaxial growth of Ag on low-index Si surfaces by a partially ionized beam (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 466-470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room temperature growth of 1000–1500 A(ring) Ag films on HF-dipped Si substrates is studied as a function of self-ion (Ag+) energy during deposition. In all cases the films contained a mixture of epitaxial grains and randomly oriented (111) grains. The orientations observed were Ag(111)/Si(111) with both type A (Ag〈110〉//Si〈110〉) and type B (Ag〈110〉//Si〈114〉) twins; Ag(110)/Si(110) with Ag〈001〉//Si〈001〉; and Ag(100)/Si(100) with Ag〈011〉//Si〈011〉. All three constructions match three Si atomic rows with four Ag rows. As judged by the ratio of epitaxial to nonepitaxial grains, the strength of the epitaxy was seen to decrease in the order (111)(approximately-greater-than)(110)(approximately-greater-than)(100). Increasing the Ag+ ion energy during the deposition was generally seen to decrease this ratio. Annealing of the Ag/Si(100) films induced preferential (100) grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351876
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  • 2
    Electronic Resource
    Electronic Resource
    Study of silver diffusion into Si(111) and SiO2 at moderate temperatures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1392-1396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of Ag from epitaxial layers into Si(111) is studied under an anneal of 450–500 °C using the secondary ion mass spectrometry depth profiling tool. The measurements yielded values of the diffusion constant (0.80–1.6 × 10−15 cm2/s) which fall short of literature values extrapolated from higher-temperature Arrhenius laws. Diffusion of Ag into SiO2 was also measured directly. The observed diffusivity of 1.0 × 10−15 cm2/s is a factor of ∼ 105 smaller than expected from previous determinations of the diffusivity of Ag+ in SiO2 obtained from anneals in forming gas. The discrepancy may be due to changes in the local electrostatic environment in the absence of acceptor levels in SiO2 from dissolved gases which are absent in vacuum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349547
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 773-777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of room-temperature epitaxy of vapor-deposited thin Ag films on Si(111) accomplished under conventional vacuum conditions is reported. Epitaxy was also observed at 350 °C. The films were deposited using a partially ionized beam deposition system, and were typically 1500 A(ring) thick. Epitaxy was confirmed via pole-figure analysis. Scanning electron microscopy revealed excellent surface flatness even for the room-temperature films. Contrary to previous observations, the growth was found to proceed by the layer mode, even at the elevated temperature. This change in morphology is attributed to the enhanced density of nucleation sites due to the energetic ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347363
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  • 4
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6719-6721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is presented for the blocking of Cu diffusion into SiO2 and Si by Ta and Ta/W barriers. The anneal was performed at 450 °C for 30 min. Here, W is rejected as a potential barrier for Cu technology. A Cr layer as thin as 200 A(ring) is shown to limit diffusion into Si to ∼600 A(ring). The study also demonstrates the utility and versatility of secondary ion mass spectrometry for evaluating potential diffusion barriers, and the need for such corroborative characterization in light of the lesser sensitivity of Rutherford backscattering spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348973
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  • 5
    Electronic Resource
    Electronic Resource
    Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6766-6773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films (1–10 μm) of the nonlinear material 2-methyl-4-nitroaniline were deposited on Ag, Cu, and Si by conventional and partially ionized beam deposition. The use of ions was seen to promote a highly oriented film, with only the single x-ray diffraction orientation (112) being observed at reduced temperatures (−50 °C). The effect of the ions on the physical microstructure of the films was to densify the film and reduce the size of the microcrystals. The films had powderlike optical properties and displayed a strong second harmonic from a Nd:YAG laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349851
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  • 6
    Electronic Resource
    Electronic Resource
    Deposition of amorphous fluoropolymer thin films by thermolysis of Teflon amorphous fluoropolymer (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1866-1868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films (0.3–5 μm) of an amorphous fluoropolymer (AF) derived from the copolymeric material Teflon AF 1600 were deposited on Si (100) wafers by vacuum pyrolysis. Infrared spectroscopy indicated that the composition of the deposited films was similar to the source material. The deposited films were amorphous by x-ray diffraction. The surface morphology contained micropores which did not extend through films deposited at a low rate. The refractive index was ∼1.2 at 633 nm. Comparisons are made to films derived from ordinary Teflon (also by pyrolysis). The mechanism for the repolymerization of the Teflon AF copolymer at the substrate surface is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107163
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature epitaxial growth of Ag(110)/GaAs(100) films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 174-176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ag films were deposited in a partially ionized beam vacuum system on undoped GaAs(100) substrates at room temperature. The x-ray pole-figure technique was used to characterize the crystal orientation. The epitaxial relationship observed was Ag(110)/GaAs(100) with Ag[100]//GaAs[1¯10]. The epitaxy was achieved at a vacuum in the 10−6 Torr range with no in situ cleaning. The substrates were prepared only by a HF dip immediately prior to deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106983
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