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  • 1
    Electronic Resource
    Electronic Resource
    Coherent and incoherent dynamics of excitons in semiconductor microcavities (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1295-1303 
    Details
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions) ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We have investigated the dynamics of impulsively excited planar microcavities in the strongly couple regime. With resonant, coherent excitation, the emitted light shows vacuum-Rabi oscillations and a lifetime corresponding to twice the cavity lifetime. As the light intensity is increased, the exciton bleaching leads to reduced normal-mode splitting. The role of interface disorder on the dynamic splitting is discussed. Coherence transfer in exciton-exciton scattering is observed. Off-resonant excitation leads to long lifetimes limited by scattering into the radiatively coupled states of the exciton-cavity system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457201
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  • 2
    Electronic Resource
    Electronic Resource
    Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 670-672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In(Ga)As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to carrier–carrier scattering-dominated intradot relaxation is very fast (∼130 fs), indicating that this is not the factor limiting the bandwidth of directly modulated quantum dot lasers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493665
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  • 3
    Electronic Resource
    Electronic Resource
    Large-signal coherent control of normal modes in quantum-well semiconductor microcavity (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3941-3943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate coherent control of the cavity-polariton modes of a quantum-well semiconductor microcavity in a two-color scheme. The cavity enhancement of the excitonic nonlinearity gives rise to a large signal; modulating the relative phase of the excitation pulses between zero and π produces a differential reflectivity (ΔR/R) of up to 20%. The maximum nonlinear signal is obtained for cocircular pump and probe polarization. Excitation-induced dephasing is responsible for the incoherent nonlinear response, and limits the contrast ratio of the optical switching. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378316
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence of narrow-band terahertz generation from periodically poled lithium niobate (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1244-1246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Femtosecond optical pulses are used to generate narrow-band terahertz wave forms via optical rectification in a periodically poled lithium niobate crystal. By cooling the crystal to reduce losses due to phonon absorption, we are able to obtain bandwidths as narrow as 18 GHz at a carrier frequency of 1.8 THz. Temperature-dependent measurements show insignificant bandwidth broadening between 10 and 120 K, although the terahertz power substantially decreases as the temperature increases. Absolute power measurements indicate a conversion efficiency of at least 10−5. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290046
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  • 5
    Electronic Resource
    Electronic Resource
    Domain mapping of periodically poled lithium niobate via terahertz wave form analysis (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2488-2490 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a nondestructive probing technique to investigate the inner crystal domain structure of ferroelectric crystals by analyzing the terahertz wave forms generated by optical rectification. Quantitative analysis of the domain structure has been performed for the domain width in periodically poled lithium niobate. Simulation results show that the terahertz wave form analysis reproduces root-mean-square domain width fluctuations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318725
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2162-2164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the transient temperature-dependent carrier population in the confined states of self-assembled In0.4Ga0.6As quantum dots as well as those of the surrounding wetting layer and barrier region using differential transmission spectroscopy. Results show directly that thermal reemission and nonradiative recombination contribute significantly to the dynamics above 100 K. We offer results of an ensemble Monte Carlo simulation to explain the contribution of these thermally activated processes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462860
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  • 7
    Electronic Resource
    Electronic Resource
    Generation of narrow-band terahertz radiation via optical rectification of femtosecond pulses in periodically poled lithium niobate (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2505-2507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a promising technique for generating narrow-band terahertz electromagnetic radiation. Femtosecond optical pulses are propagated through a periodically poled lithium-niobate crystal, where the domain length is matched to the walk-off length between the optical and THz pulses. The bandwidth of the THz wave forms is 0.11 at 1.7 THz. Optical rectification gives rise to a THz wave form which corresponds to the domain structure of the periodically poled lithium niobate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126390
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  • 8
    Electronic Resource
    Electronic Resource
    Tunable narrow-band terahertz generation from periodically poled lithium niobate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3583-3585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique for generating tunable narrow-band terahertz radiation via optical rectification in periodically-poled lithium niobate. Frequency tuning is accomplished by spatially chirping the domain width laterally to the beam propagation direction, and adjusting the temperature of the sample. We demonstrate tuning over a continuous range from 0.8 to 2.5 THz. The bandwidth of the terahertz waveforms is as narrow as 0.02 THz. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1373406
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast differential transmission spectroscopy with a resonant pump reveals evidence of electronic tunneling among the excited levels of vertically aligned In0.4Ga0.6As self-organized quantum dots. This evidence of tunneling is observed as a rapid spectral redistribution of electrons within a few hundred femtoseconds of optical excitation. Measurements show that this spectral spread is independent of carrier density and, therefore, indicate that carrier–carrier scattering is not the main mechanism for carrier redistribution. Instead, electronic tunneling is responsible for the interdot coupling; tunneling rate calculations agree reasonably with the experiment, supporting this conclusion. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126356
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  • 10
    Electronic Resource
    Electronic Resource
    Tunneling escape time of electrons from a quantum well under the influence of an electric field (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 60-62 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed time-resolved photoluminescence on GaAs/AlxGa1−xAs single quantum well structures with an electric field applied perpendicular to the well plane. The quantum wells are coupled to the GaAs continuum through a thin barrier; the escape time of the electrons in the well was measured by time-resolved photoluminescence. The dependence of the decay time on applied bias was found to agree very well with a simple semiclassical model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100835
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