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  • 1
    Digitale Medien
    Digitale Medien
    Tunneling escape time of electrons from a quantum well under the influence of an electric field (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 60-62 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have performed time-resolved photoluminescence on GaAs/AlxGa1−xAs single quantum well structures with an electric field applied perpendicular to the well plane. The quantum wells are coupled to the GaAs continuum through a thin barrier; the escape time of the electrons in the well was measured by time-resolved photoluminescence. The dependence of the decay time on applied bias was found to agree very well with a simple semiclassical model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100835
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  • 2
    Digitale Medien
    Digitale Medien
    Transient velocity overshoot dynamics in GaAs for electric fields ≤ 200 kV/cm (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 923-925 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have experimentally studied the transient velocity overshoot dynamics of photoexcited carriers in GaAs for electric fields as great as 200 kV/cm. Time domain waveforms proportional to the velocity and the acceleration of carriers have been acquired, respectively, from guided and free-space radiating signals which contain terahertz frequency components. The measurements demonstrated that the degree of overshoot was maximized for an electric field on the GaAs between 40 and 50 kV/cm when 1.44-eV photons in an 80-fs laser pulse excited the sample. For carriers excited with higher initial energy (1.55 eV), the degree of overshoot decreased and the maximum degree of overshoot occurred at a higher electric field.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109846
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  • 3
    Digitale Medien
    Digitale Medien
    New coherent detector for terahertz radiation based on excitonic electroabsorption (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate a new technique for the coherent measurement of free-space THz electrical transients, based on the parallel-field excitonic electroabsorption effect in GaAs quantum wells. A THz transient generated from a photoconductive dipole antenna is measured with a rise time of 290 fs and a full width at half maximum of 360 fs. The initial rise of the THz wave form is abrupt, and does not display the exponential leading edge apparent in waveforms measured with photoconductive techniques. The detector sensitivity is sub-100 mV/cm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108419
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  • 4
    Digitale Medien
    Digitale Medien
    Femtosecond intersubband relaxation and population inversion in stepped quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 435-437 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated intersubband relaxation rates in a stepped quantum well at room temperature using differential transmission spectroscopy with subpicosecond time resolution. The dynamics of the subband populations are derived from the experimentally observed reduction of oscillator strength of the corresponding exciton transitions. In the stepped quantum well the relaxation through longitudinal optical-phonon emission from n=3 to 1 (25 ps) is slower than that from 2 to 1 (220 fs), due to the reduced wave function overlap and larger wave vector required for intersubband scattering. When the n=3 state is pumped, a population inversion between n3 and n2 (which are separated by 7 THz) is observed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116404
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  • 5
    Digitale Medien
    Digitale Medien
    High-carrier-density electron dynamics in low-temperature-grown GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3245-3247 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pump-probe differential transmission measurements examine high-carrier-density phenomena in as-grown and annealed GaAs samples grown at temperatures from 210 to 270 °C. We observe trap saturation and Auger recombination, and accurately model the measurements on annealed samples with a simple two level rate equation, allowing us to extract the trapped-electron lifetimes. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119138
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  • 6
    Digitale Medien
    Digitale Medien
    Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 670-672 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In(Ga)As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to carrier–carrier scattering-dominated intradot relaxation is very fast (∼130 fs), indicating that this is not the factor limiting the bandwidth of directly modulated quantum dot lasers. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1493665
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  • 7
    Digitale Medien
    Digitale Medien
    Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrafast differential transmission spectroscopy with a resonant pump reveals evidence of electronic tunneling among the excited levels of vertically aligned In0.4Ga0.6As self-organized quantum dots. This evidence of tunneling is observed as a rapid spectral redistribution of electrons within a few hundred femtoseconds of optical excitation. Measurements show that this spectral spread is independent of carrier density and, therefore, indicate that carrier–carrier scattering is not the main mechanism for carrier redistribution. Instead, electronic tunneling is responsible for the interdot coupling; tunneling rate calculations agree reasonably with the experiment, supporting this conclusion. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126356
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  • 8
    Digitale Medien
    Digitale Medien
    Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2162-2164 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We measured the transient temperature-dependent carrier population in the confined states of self-assembled In0.4Ga0.6As quantum dots as well as those of the surrounding wetting layer and barrier region using differential transmission spectroscopy. Results show directly that thermal reemission and nonradiative recombination contribute significantly to the dynamics above 100 K. We offer results of an ensemble Monte Carlo simulation to explain the contribution of these thermally activated processes. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1462860
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  • 9
    Digitale Medien
    Digitale Medien
    Large-signal coherent control of normal modes in quantum-well semiconductor microcavity (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3941-3943 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate coherent control of the cavity-polariton modes of a quantum-well semiconductor microcavity in a two-color scheme. The cavity enhancement of the excitonic nonlinearity gives rise to a large signal; modulating the relative phase of the excitation pulses between zero and π produces a differential reflectivity (ΔR/R) of up to 20%. The maximum nonlinear signal is obtained for cocircular pump and probe polarization. Excitation-induced dephasing is responsible for the incoherent nonlinear response, and limits the contrast ratio of the optical switching. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1378316
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  • 10
    Digitale Medien
    Digitale Medien
    Domain mapping of periodically poled lithium niobate via terahertz wave form analysis (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2488-2490 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate a nondestructive probing technique to investigate the inner crystal domain structure of ferroelectric crystals by analyzing the terahertz wave forms generated by optical rectification. Quantitative analysis of the domain structure has been performed for the domain width in periodically poled lithium niobate. Simulation results show that the terahertz wave form analysis reproduces root-mean-square domain width fluctuations. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1318725
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