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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 98 (1976), S. 236-238 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 2337-2340 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A computational approach for simulations in the emerging field of short-pulse (τ〈1 psec), high-intensity (I=1017–1019 W/cm2 ) laser–plasma interactions is introduced. The approach is a particle-in-cell method (PIC) which, as unique features, incorporates electron–ion collisions at relativistic energies and the time variation of the ionization state of the plasma. This has been incorporated into the wave two-dimensional plasma simulation code [Phys. Fluids 18, 1017 (1975)] for the purpose of simulating experiments at the Los Alamos Bright Source facilities [Phys. Rev. A 39, 454 (1989)]. However, the computational methods should be useful for work in laser fusion and other areas where rapid ionization occurs.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1434-1436 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown CdTe (111) on GaAs (100) at 165 °C using a 248 nm excimer laser to photodissociate dimethylcadmium and diethyltellurium in the gas phase. Good crystalline quality of the layers is confirmed by x-ray diffractometry. Growth rates up to 2 μm/h have been recorded in real time using time-resolved reflectivity. Auger analysis reveals that the films are stoichiometric throughout the thickness of the layer, and that carbon and oxygen contaminants are below the level of detectability. We have used laser-induced fluorescence spectroscopy to examine the photodissociation mechanism of diethyltellurium and have observed a linear dependence of Te atom production on excimer laser power.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2526-2528 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: KrF excimer laser irradiation of CdTe at fluences below the melt threshold (≤75 mJ/cm2) removes surface layers and produces reversible changes in the surface composition that depend upon the laser fluence and number of laser pulses delivered to the surface. At fluences above ∼40 mJ/cm2 a Te-rich layer is obtained. A stoichiometric composition can be restored by irradiation at reduced laser fluence. The primary desorption products are Cd and Te2, and the velocities of these species are well described by a Maxwellian distribution. The fluence-dependent changes in CdTe surface composition are consistent with a photothermal mechanism based on the competition between formation and desorption of Te2 and desorption of Cd atoms from the laser-irradiated surface.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1340-1342 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of solid phase epitaxy (SPE) have been measured in MeV ion-implanted amorphous Si layers up to 5 μm thick. Epitaxial crystallization in these layers occurs at a constant rate throughout the entire film, without loss of interface planarity or competition from random nucleation or twin formation. The activation energy for SPE in thick layers is found to be 2.70 eV, in excellent agreement with the value determined previously in much thinner films. The SPE kinetics are shown not to depend on the implant dose for doses up to 1000 times the threshold for amorphization. The presence of water vapor in the annealing ambient during SPE results in the indiffusion of hydrogen and a concomitant reduction of the SPE growth rate at distances as great as 2 μm from the surface. This effect may have important implications for the development of a microscopic model of the SPE process in silicon.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1573-2959
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Indicators of the condition and sustainability of agricultural lands in five Mid-Atlantic states were measured in 1994. Indicators were selected to reflect crop productivity and land stewardship on annually harvested herbaceous crop (AHHC) land, which covers almost 10% of the land area in this region. Overall, condition of agricultural lands in the region is good. Crops generally yielded more than those grown in the 1980s, with a mean observed/expected yield index greater than 1. The mean soil quality index was slightly better than a "moderate" rating for crop growth. Almost 2/3 of the AHHC land is covered by crop rotation plans, with the remaining land mostly in hay fields. Insecticides were applied to less than 20% of AHHC land, and less than 20% of the land where pesticides were applied has high to moderately high potential for pesticides leaching into groundwater. However, integrated pest management (IPM) is practiced on less than 20% of AHHC land. Hay showed more efficient use of nitrogen than seed crops, and non-tilled sites, which are mostly hay, had more microbial biomass (suggesting more nutrient cycling) than tilled sites. This information could provide a baseline for a long-term monitoring program for agroecosystems in the region.
    Type of Medium: Electronic Resource
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