ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The epitaxial relationship of Si deposited on 3C-SiC was studied using both free standing3C-SiC(100) material from Hoya and 3C-SiC thin layers deposited on Si(100) as substrates. Theconditions of Si growth were varied depending on the substrate. When Si is deposited at 1000°C on(001) 3C-SiC, it is in perfect epitaxial relation with the SiC layer [100]Si//[100]SiC and[001]Si//[001]SiC. After a 20 ms flash lamp pulse on the same sample, which has the effect of fastmelting of the Si top layer only, the defects in the Si are eliminated. Using free standing 3C-SiC, thedeposition temperature was not limited by the Si melting point so that it was fixed at 1500°C inorder to form a set of Si liquid droplets on the surface with diameters ranging from 5 to 20 μm.Surprisingly more than 60% of the Si droplets exhibit the epitaxial relation [110]Si//[001]SiC and[111]Si//[110]SiC after crystallization. The occurrence of this epitaxial relationship can be understoodin terms of lattice mismatch reduction from 20% to 18.3%. The conditions of crystallization, mostprobably the cooling rate, seem to have a strong effect on Si orientation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1563.pdf
Permalink