ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SnO2 thin films were prepared on SiO2/Si substrate by RF-Magentron Sputtering method,varying the deposition time and Ar-to-O2 flow ratio. The post-annealing was conducted at 500 oCand 700 oC in Ar and O2 atmosphere, respectively. Film characteristics were very sensitive to thegas flow ratio during the deposition and the conditions of post-annealing. The Film thicknessdecreased with decreasing of Ar flow ratio at a constant amount (50 sccm) of total gas flow.Especially, the film deposited under Ar-O2 mixture gas (Ar-to-O2 ratio of 50%) showed clearlyaggregated morphology of small particles (cauliflower) in a wide range of area. In the annealedfilms, these cauliflowers separated some small grains, decreasing the film thickness
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.993.pdf
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