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  • 1
    Electronic Resource
    Electronic Resource
    Temperature Dependence of Dominant Hillock Phases during Electromigration of Eutectic SnPb Solder Lines (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 124-126 (June 2007), p. 9-12 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In-situ observation by scanning electron microscope of the microstructure evolution nearthe cathode depletion region and the quantitative analysis on the number of hillock phases in theeutectic SnPb edge drift structure made it clear that the dominant migrating element and dominanthillock phase were Sn and Pb, respectively, under 50 oC while both dominant migrating element anddominant hillock phase were Pb above 100 oC. Such temperature-dependence of the dominant hillockphases in the eutectic SnPb solder can be understood by considering the atomic size factors of themetallic solid solutions
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.9.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Two partial deletion mutations involving the same Alu sequence within intron 8 of the LDL receptor gene in Korean patients with familial hypercholesterolemia (1997)
    Springer
    Human genetics 〈Berlin〉 99 (1997), S. 155-163 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Twenty-eight unrelated persons heterozygous for familial hypercholesterolemia (FH) were screened to assess the frequency and nature of major structural rearrangements at the low-density lipoprotein (LDL) receptor gene in Korean FH patients. Genomic DNA was analyzed by Southern blot hybridization with probes encompassing exons 1–18 of the LDL receptor gene. Two different deletion mutations (FH29 and FH110) were detected in three FH patients (10.7%). Each of the mutations was characterized by the use of exon-specific probes and detailed restriction mapping mediated by long-PCR (polymerase chain reaction). Mutation FH29 was a 3.83-kb deletion extending from intron 6 to intron 8 and FH110 was a 5.71-kb deletion extending from intron 8 to intron 12. In FH29, the translational reading frame was preserved and the deducible result was a cysteine-rich A and B repeat truncated protein that might be unable to bind LDL but would continue to bind β-VLDL. FH110 is presumed to be a null allele, since the deletion shifts the reading frame and results in a truncated protein that terminates in exon 13. Sequence analysis revealed that both deletions have occurred between two Alu-repetitive sequences that are in the same orientation. This suggested that in these patients the deletions were caused by an unequal crossing over event following mispairing of two Alu sequences on different chromatids during meiosis. Moreover, in both deletions, the recombinations were related to an Alu sequence in intron 8 and the deletion breakpoints are found within a specific sequence, 27 bp in length. This supports the hypothesis that this region might have some intrinsic instability, and act as one of the important factors in large recombinational rearrangements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004390050331
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 217-221 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiNx:H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si–H contents in the SiNx:H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiNx:H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378334
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  • 4
    Electronic Resource
    Electronic Resource
    Vitamin C Prevents Radiation-Induced Endothelium-Dependent Vasomotor Dysfunction And De-Endothelialization By Inhibiting Oxidative Damage In The Rat (2001)
    Melbourne, Australia : Blackwell Science Pty
    Clinical and experimental pharmacology and physiology 28 (2001), S. 0 
    Details
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. The present study was undertaken to determine whether endothelial function or morphology was altered in aortic rings of rats after irradiation, to investigate the mechanism of radiation effects on the endothelium and to examine the effect of vitamin C treatment against radiation-induced damage of the endothelium.2. Female Sprague-Dawley rats were randomized into four groups (control, radiation, radiation + vitamin C, radiation + vitamin C + NG-nitro-L-arginine methyl ester (L-NAME); n = 10 for each group and n = 7 for the control group) and were irradiated with 10 Gy of 137Cs as a radiation source. Segments of the thoracic aorta were obtained and isometric tension, levels of 8-hydroxydeoxyguanosine (OH-dG) and immunohistochemical staining were measured.3. Irradiation significantly impaired the acetylcholine-induced vasodilation of aortic segments, an effect that could be prevented by pretreatment with vitamin C (500 mg/kg per day). This beneficial effect of vitamin C was abolished by the addition of L-NAME (100 μg/kg per day), an inhibitor of nitric oxide (NO) synthesis. Irradiation significantly increased the level of OH-dG in the aorta (1.02 ± 0.27 vs 2.61 ± 0.78 OH-dG/105 deoxyguanosine (dG) for control and irradiated tissues, respectively; P 〈 0.01), an increase that was prevented by vitamin C treatment (1.59 ± 0.23 OH-dG/105 dG; P 〈 0.01). Irradiation caused significant de-endothelialization (von Willebrand factor (vWF) staining was 93 ± 7 vs 100% in irradiated and control tissues, respectively; P 〈 0.05) and this was prevented by vitamin C treatment (vWF staining 98 ± 3%; P 〈 0.05).4. Radiation caused endothelial damage and impaired NO production through oxidative injury, resulting in a selective impairment of endothelial-dependent vasodilation that could be prevented by vitamin C, partly through anti-oxidant mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1440-1681.2001.03528.x
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  • 5
    Electronic Resource
    Electronic Resource
    Differential Diagnosis of Slow/Slow Atrioventricular Nodal Reentrant Tachycardia from Atrioventricular Reentrant Tachycardia Using Concealed Posteroseptal Accessory Pathway by 12-Lead Electrocardiography (2003)
    350 Main Street , Malden , MA 02148-5018 , U.S.A . : Blackwell Publishing
    Pacing and clinical electrophysiology 26 (2003), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Slow pathways are used as both antegrade and retrograde conduction pathway in slow/slow atrioventricular nodal reentrant tachycardia (SS-AVNRT), and patients with SS-AVNRT have tachycardia ECGs mimicking atrioventricular reentrant tachycardia using concealed posteroseptal accessory pathway (PS-AVRT). Therefore, SS-AVNRT can be misdiagnosed as PS-AVRT, and the differential diagnosis is clinically important. Standard 12-lead ECGs during tachycardia were analyzed in patients with SS-AVNRT (n = 10) and PS-AVRT (n = 10). All these patients were diagnosed by electrophysiological study and underwent successful catheter ablation. Differences of the RP' intervals (dRP') between V1 and the inferior leads were evaluated. SS-AVNRT had significantly longer RP' intervals measured in V1 (167 ± 25.2 vs 137 ± 26.8 ms, SS-AVNRT vs PS-AVRT, respectively, P = 0.02), longer dRP' between V1 and II (dRP'[V1-II], 37 ± 14 vs 17 ± 6.7 ms, P = 0.0007), longer dRP'[V1-III] (39 ± 14 vs 17 ± 9.9 ms, P = 0.0011), and longer dRP'[V1-aVF] (39 ± 13 vs 20 ± 9.5 ms, P = 0.0008). The following criteria were suggested for differential diagnosis of SS-AVNRT from PS-AVRT: dRP'[V1-II] 〉25 ms (sensitivity and specificity: 80% and 100%, respectively), dRP'[V1-III] 〉23 ms (90% and 90%), dRP'[V1-aVF] 〉30 ms (90% and 90%). Differences of the RP' intervals between V1 and the inferior leads in the tachycardia ECGs were useful for differential diagnosis of SS-AVNRT from PS-AVRT. (PACE 2003; 26:2296–2300)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1540-8159.2003.00362.x
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructure and interfacial states of silicon dioxide film grown by low temperature remote plasma enhanced chemical vapor deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1346-1354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of SiO2 film and the Si/SiO2 interface formed by remote plasma enhanced chemical vapor deposition with the addition of chlorine into SiH4–N2O have been investigated. With the chlorine addition, the deposition rate increased at low deposition temperatures but at temperatures above 150 °C, it decreased because of the desorption of surface halide species. Chlorine at the Si/SiO2 interface prevented further subcutaneous oxidation and formed strong, terminal site Si–Cl bonds which reduced the interface state density. The substitution reaction of O and H with Cl in the bulk oxide film leads to a disordered film structure and decreased hydrogen concentration. The surface roughness increased and the refractive index decreased with increased Cl2 addition. With chlorine addition of less than 6 vol %, the interface trap density (located at ∼Ev+0.3–0.4 eV) significantly decreased down to the 1–3×1011 eV cm2 level at the Si midgap. At high chlorine partial pressure and temperature, the local interface trap density (located at ∼Ev+0.7–0.8 eV) increased due to increased structural disorder resulting from breakage of the Si–O bond. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370893
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of chlorine addition on the silicon dioxide properties deposited with remote plasma enhanced chemical vapor deposition at low temperatures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3477-3479 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of SiO2 films deposited in a remote plasma enhanced chemical vapor deposition (RPECVD) process with chlorine addition into the SiH4–N2O reactants has been studied. With Cl2 addition, the interface trap density (located at ∼Ev+0.3–0.35 eV) was decreased and strained silicon bonds were relaxed. As chlorine partial pressure and deposition temperature were increased, however, porosity and surface roughness of the film were increased due to the formation and desorption of Si–Cl or O–Cl bonds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113769
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  • 8
    Electronic Resource
    Electronic Resource
    Structural changes of silicon dioxide films caused by synchrotron irradiation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1236-1238 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of synchrotron radiation (SR) on silicon oxide films, deposited with remote plasma-enhanced chemical-vapor deposition, has been investigated. SR irradiation had an effect on the silicon dioxide structure which was confirmed by in situ infrared reflection adsorption spectroscopy. As the substrate temperature was increased to 373 K, the SiO2 structure became loose by irradiation and surface migration was observed. Surface migration of species induced by SR irradiation led to the increase of surface roughness and also the formation of hemispherical bubbles on the film surface, which was confirmed by atomic force microscope. Generation of oxygen-related paramagnetic defect was observed by electron spin resonance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362861
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of hydrogen plasma precleaning on the removal of interfacial amorphous layer in the chemical vapor deposition of microcrystalline silicon films on silicon oxide surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2219-2221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcrystalline silicon(μc-Si) film deposited on silicon oxide in a remote plasma enhanced chemical vapor deposition (RPECVD) with disilane (Si2H6) and silicon tetrafluoride (SiF4) has been investigated. It was found that in situ hydrogen plasma cleaning of the substrate prior to deposition is effective to reduce the interfacial amorphous transition region. It is believed that hydrogen plasma cleaning generated adsorption and nucleation sites by breaking weak Si–O and Si–Si bonds and also removed oxygen/carbon impurity. Surface roughening was observed from the hydrogen plasma precleaning which helped nucleation and crystallization at the initial stage of the growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115864
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  • 10
    Electronic Resource
    Electronic Resource
    Electrocardiographic Characteristics of Fasciculoventricular Pathways (2005)
    350 Main Street , Malden , MA 02148-5018 , USA and 9600 Garsington Road , Oxford OX4 2DQ , UK . : Blackwell Science Inc
    Pacing and clinical electrophysiology 28 (2005), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Introduction: Fasciculoventricular (FV) pathways are rare variants of preexcitation, and their ECGs may be misinterpreted as Wolff-Parkinson-White syndrome with anteroseptal accessory pathways (WPW-AS). We analyzed the electrocardiographic characteristics of the patients with FV pathways to find out the different findings from WPW-AS. Methods and Results: Five patients with FV pathways and four patients with WPW-AS who underwent electrophysiologic studies were evaluated. Intervals and amplitudes of each wave and QRS morphologies were analyzed in standard 12-lead ECGs of these patients by two independent cardiologists without the information of the electrophysiologic findings. PR intervals were longer in FV pathways (122 ± 11.0 vs 83 ± 21 ms, FV pathways vs WPW-AS, P = 0.017). In lead V1, narrower width of R waves (25 ± 6 vs 45 ± 13 ms, P = 0.037) and smaller amplitude of S waves (12.8 ± 8.3 vs 26.6 ± 7.4 mm, P = 0.037) were observed in FV pathways. The polarity of delta waves in V1 was flat or negative in contrast with the cases of WPW-AS in which the polarity was positive. Three of five patients had notching in the descending limb of S waves in V1, which was not observed in WPW-AS. Conclusion: FV pathways have different ECG characteristics from WPW-AS in PR interval and morphology of QRS complexes in lead V1 of the standard 12-lead ECG.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1540-8159.2005.09371.x
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