ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract A comparative study on the strain relief behaviour of epitaxially grown In x Ga1 − x As (where 0.1 ≤ × ≤ 1) alloys on GaAs (001) and (110) were carried out using transmission electron microscopy (TEM) and high resolution X-ray diffraction (XRD). Three different strain relief mechanisms related to the formation of misfit dislocations (MDs) were observed. The dominant strain relief process can be a single mechanism or a combination of two of the three mechanisms depending on the substrate orientation and the in content.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00185931
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