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  • 1
    Electronic Resource
    Electronic Resource
    Nonequilibrium phonon detectors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1791-1804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many experiments in nuclear and particle physics would benefit from a device capable of detecting nonionizing events with a low energy threshold. We report on experimental tests of a low-temperature detector based on the registration of nonequilibrium phonons. The device is composed of a silicon single crystal with superconducting tunnel junctions (Al/Al2O3/Al) evaporated onto its surface. In first experiments a 20×10×3 mm3 crystal at an operating temperature of T = 0.37 K was tested with 5.5-MeV α particles. Pulse-height analysis and the timing of pulses in different junctions is shown to yield position and energy resolution. An energy threshold of 250 keV was estimated for absorption anywhere in the crystal. A position resolution of 0.6 mm was determined over a sensitive length of 10 mm. Though phonon focusing effects were registered in the vicinity of the [001] direction, scattered and reflected phonons dominate the signals in the general case. The experimental results are discussed in terms of ballistic and quasidiffuse phonon propagation. To improve the energy threshold, the operating temperature was lowered to 60 mK in order to increase junction sensitivity and a weak thermal coupling of the absorber to the heat bath was introduced to force phonons to leave the crystal via the detecting junctions. Si crystals of up to 20×20×10 mm3 size were used in these second experiments. With a 4 cm3 crystal a threshold of 270 keV was obtained. The performance in these experiments at 60 mK, however, was limited by exceptionally high values of the normal conducting junction resistances. With a reasonable value of this parameter it should be possible to realize an energy threshold of 1 keV with absorbers of a volume of several cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347233
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  • 2
    Electronic Resource
    Electronic Resource
    New superconducting three-terminal device based on externally controlled critical currents (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2888-2890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that at 4.2 K the critical current Ic of a superconducting Nb micro (μ) bridge (typical thickness 30 nm, length 200 μm, width 10 μm) can be reversibly varied over a wide range by applying electrical fields of the order of 108 V/m at an insulated gate prepared on top of the Nb μbridge. The preparation and the electrical characteristics of these metal/insulator/superconductor field effect transistor-like devices of the type M/NbOx/Nb, where M represents Al, Au, or Nb gate metals, are described. Additional experiments in external magnetic fields revealed that the gate-controlled effect on Ic is based on depinning due to an electric field-induced ‘quasimetallic' state of the typically 10-nm-thick NbOx. Under optimized conditions, a gate power of less than 200 μW is needed to switch the superconducting Nb μbridge into the normal conducting state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111405
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    Paper (German National Licenses)
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