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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3383-3383 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4304-4311 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the most used metallization schemes on silicon is the TiN/TiSi2/Si structure, since it has taken advantage of good electrical contact between Si and TiSi2 and the property as a diffusion barrier of TiN. In the present study, this structure has been realized by sputter depositing different layers of TiN/Ti onto silicon (100) substrate and annealing them in nitrogen ambient at different temperatures. Transmission electron microscopy as well as grazing incidence x-ray diffraction have been employed to study the morphology and the crystallographic properties of the formed layers. Initial stage of the C-49 TiSi2 formation has been investigated at 590 °C and complete formation of C-54 TiSi2 phase observed at 710 °C for higher thickness samples. Our attention has been focused on the TiN/TiSi2/Si structures obtained after annealing the deposited films at 710 and 850 °C. We demonstrate that at the annealing temperature of 850 °C as the thickness of the TiN/Ti deposited films is decreased from 600/560 to 175/30 Å, the formation of TiSi2 (C-54) phase is almost inhibited due to a faster consumption of Ti in the formation of TiN.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 52-54 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity measurements have been carried out on TiN/Ti/Si- and WSix/Si-deposited and -annealed structures. The results show that for the as-deposited samples there are periodic oscillations due to a well-defined interface roughness, while for the annealed samples the disappearance of the oscillations due to increase in surface and interface roughness of the formed silicide layers is observed. We demonstrate that the analysis of x-ray reflectivity measurements collected both in the specular and in the off-specular way, even for the samples with very high surface and interface roughness, allows the determination of structural parameters of the films and interfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2358-2360 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present investigation deals with the electrical response of palladium doped tin oxide, as a means of improving the selectivity for liquid petroleum gas (LPG) in the presence of CO, CH4. The sensor element with the composition of Pd(1.5 wt %) in the base material SnO2 sintered at 800 °C, has shown a high sensitivity towards LPG with a negligible cross interference of CO and CH4at an operating temperature of 350 °C. This greatly suggests the possibility of utilizing the sensor for the detection of LPG. X-ray photoelectron spectroscopy studies have been carried out to determine the possible chemical species involved in the gas-solid interaction and the enhancing mechanism of the Pd doped SnO2 sensor element, towards LPG sensitivity. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 35 (2000), S. 5295-5299 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Uniform crystals of CdTiO3 orthorhombic phase have been preapred by Sol-Gel method using titanium butoxide and cadmium acetate. For the first time the sample has been characterised detailedly to confirm the formation of pure single phase of CdTiO3. It is observed that the sample sintered at 500°C for 5 h showed complete formation of the single phase of CdTiO3 by X-ray diffraction technique. X-ray photoelectron spectroscopy measurement has been carried out for the bulk CdTiO3 sintered at 500 °C for 5 h, which showed 20% of Cd, 20% of Ti and 60% of O indicating stoichiometric CdTiO3. Surface morphology studies by scanning electron microscopy showed uniform crystals of CdTiO3. The purity of the compound has also been checked by Energy Dispersive X-ray method indicating the absence of foreign ions apart from that, the ratio of Cd : Ti has been calculated and found to be 1 : 1 indicating the stoichiometric CdTiO3.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 35 (2000), S. 4879-4883 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Uniform crystals of ZnWO4 have been synthesised from the equimolar mixtures of ZnO and WO3 by conventional solid state method. For the first time the sample has been characterised detailedly to confirm the formation of pure single phase of perovskite ZnWO4. The formation of ZnWO4 has been confirmed by sintering the mixtures of ZnO and WO3 at two different temperatures one at 900 °C and other at 1000 °C. It is observed that the sample sintered at 1000 °C for 24 h shows complete formation of the single phase of ZnWO4. The crystallinity and the phase formation has been confirmed by X-ray diffraction technique. X-ray photoelectron spectroscopy measurements have been carried out for the bulk ZnWO4 sintered at 1000 °C for 24 h, showing 16% of Zn, 16% of W and 68% of O indicating stoichiometric ZnWO4. Surface morphology studies by scanning electron microscopy showed uniform crystals of ZnWO4. The purity of the compound has also been checked in depth by Energy Dispersive X-ray method indicating the absence of foreign ions apart from that, the ratio of Zn : W has been calculated and found to be 1 : 1 confirming the stoichiometric ZnWO4 inside the crystals.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 33 (1998), S. 3969-3973 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract High-quality bulk ZnGa2O4 has been synthesized from equimolar mixtures of ZnO and Ga2O3 by the conventional solid-state method. For the first time, the sample has been characterized in detail to confirm the formation of pure single phase of spinel ZnGa2O4. The formation of ZnGa2O4 has been confirmed by sintering the mixtures of ZnO and Ga2O3 at different temperatures, ranging from 900–1200 °C. It is observed that the single phase of ZnGa2O4 has been formed at and above 1000 °C sintering temperature for 24 h. The crystallinity and phase formation of this single phase has been confirmed by X-ray diffraction. X-ray photoelectron spectroscopic studies have been carried out for bulk ZnGa2O4 sintered at 1000 °C for 24 h which showed 14% Zn, 28% Ga and 58% O, indicating stoichiometric ZnGa2O4. A new parameter, the energetic separation between the Zn 2p3/2 and Ga 2p3/2 peaks, has been used as a sensitive tool to distinguish between a complete formation of ZnGa2O4 compound and a mixture of ZnO and Ga2O3 powders. Surface morphology studies by scanning electron microscopy reveal that the formation of ZnGa2O4 takes place in mosaic rod-like structure. The purity of the compound has also been checked by the energy dispersive X-ray method, indicating the absence of foreign ions and the ratio of zinc to gallium has been calculated and found to be 1 : 2, indicating stoichiometric ZnGa2O4.
    Type of Medium: Electronic Resource
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