Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2214-2216
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Direct electrical characterization of 1-μm-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep-level defects within the regrown layer. A deep-level trap at Ec −0.40 eV has been found associated with the amorphous-crystalline boundary dislocation loops. In addition, a near mid-gap trap at Ev+0.54 eV, observed in p-type samples, is believed to be responsible for a spatially localized generation current of ∼2×10−6 A/cm2 associated with the dislocation loops.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103895
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