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  • 1
    Electronic Resource
    Electronic Resource
    Highly Doped Microcrystalline SiGe Films: Structure and Transport Properties (1999)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 67-68 (Apr. 1999), p. 149-154 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.67-68.149.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Kinematic model for four-center, AB+CD, reactions
    Amsterdam : Elsevier
    Chemical Physics Letters 226 (1994), S. 47-55 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(94)00709-8
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  • 3
    Electronic Resource
    Electronic Resource
    On the shattering of clusters by surface impact heating (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 8097-8102 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The onset of a shattering regime when a supersonic cluster undergoes an ultrafast heating by its impact at a surface, proposed on the basis of an information theoretic analysis, has now been demonstrated experimentally for molecular clusters. It is emphasized that the sudden onset of shattering as a function of impact velocity is a robust result depending essentially only on the multitude of possible isomers of larger clusters. There is one underlying assumption of the information theoretic approach—namely that there is a rather rapid thermalization of the translational degrees of freedom of the impact heated cluster so that mean energy is the only energetic constraint. When this is not necessarily the case, e.g., for ionic clusters at lower energies, there will not be extensive fragmentation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472663
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  • 4
    Electronic Resource
    Electronic Resource
    Transport properties of boron-doped crystallized amorphous Si1−xGex films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4343-4350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport properties of crystallized amorphous Si1−xGex films, having different Ge content (x) and highly doped with boron were studied. The films were deposited by molecular beam at room temperature and subsequently annealed in vacuum at different temperatures between 500 and 900 °C for 1 h. The microstructure of the crystallized Si1−xGex films was characterized by means of transmission electron microscopy, x-ray diffraction, and scanning electron microscopy. Measured transport properties included Hall hole concentration (pH), Hall mobility (μH), electrical conductivity (σ), and the Seebeck coefficient (S), from which the "power factor" (S2σ) was evaluated. The results obtained for the Hall mobility of the Si1−xGex films are discussed on the basis of the carrier trapping model. The trapping state density at the grain boundaries increases with increasing B concentration, although it is not significantly dependent on Ge content. Consequently, the mobility energy barrier decreases with increasing B concentration and increasing Ge content. It was found that in all the studied Si1−xGex films, independent of x, the predominant scattering mechanism changes from acoustic phonon scattering to ionized impurity scattering with increasing the boron concentration from 5×1018 to 5×1020 cm−3. In addition, the Si1−xGex films demonstrate high electrical conductivity as well as a high Seebeck coefficient, after 1 h annealing at 600–800 °C, and thus exhibit a high "power factor" of the order of 6 μW/cm K2. Thus, these films have potential applications in thin-film thermoelectric devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368697
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  • 5
    Electronic Resource
    Electronic Resource
    Ballistic and dissociative collisions of a rare-gas atom with a halogen molecule
    Amsterdam : Elsevier
    Chemical Physics Letters 220 (1994), S. 291-298 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(94)00184-7
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  • 6
    Electronic Resource
    Electronic Resource
    Refined mapping of the gene for thiamine-responsive megaloblastic anemia syndrome and evidence for genetic homogeneity (1998)
    Springer
    Human genetics 〈Berlin〉 103 (1998), S. 455-461 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Thiamine-responsive megaloblastic anemia (TRMA, also known as Rogers syndrome, OMIM 249270) is a rare autosomal recessive disorder characterized by a triad of megaloblastic anemia, diabetes mellitus, and sensorineural deafness. Patients respond, to varying degrees, to treatment with megadoses of thiamine. We have recently shown genetic linkage of the TRMA gene to a 16-centimorgan (cM) region on 1q23.2–1q23.3 based on the analysis of four large, inbred families of Alaskan, Italian, and Israeli-Arab origin. Here we narrow the TRMA interval down to 4 cM based on genetic recombination, homozygosity mapping, and linkage disequilibrium (highest LOD score of 12.5 at D1S2799, at a recombination fraction of 0). We provide further evidence that the TRMA gene is located in this region and confirm the homogeneity of the disease. In this analysis, we genotyped seven additional families of diverse ethnic origin (Pakistani, Indian, Italian, Brazilian, and Japanese), and analyzed additional markers in two previously reported families showing evidence of linkage disequilibrium in a large area of their haplotypes. The multi-system manifestations of TRMA suggest that thiamine has a pivotal role in a multiplicity of physiological processes. Mapping the TRMA gene and understanding the molecular basis of the disease might, thus, shed light on the role of thiamine in common disorders such as deafness, anemia, and diabetes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004390050850
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