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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of surface-limited release of hydrogen from oxidized metals (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 180-185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analysis has been made of the time dependence of surface recombination and release of deuterium from helium-bubble traps in iron with both clean and oxidized surfaces. In both cases second-order kinetics are obeyed over a large range of time scales, including short times when the traps are saturated. We show this is possible only if, in both cases, release is limited by escape from surface sites which have the same energy as the traps. We therefore propose that the oxide represents an additional barrier, but does not alter the energies of sites from which recombination takes place relative to solution sites. We further show that for both iron and stainless steel the prefactor for the recombination rate is about the same for a bare surface and for an oxide layer. Thus effects of the barrier are mostly on the activation enthalpy of release.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342567
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    One- and Two-Dimensional Magnetic Systems (1974)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 4 (1974), S. 337-363 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.04.080174.002005
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  • 3
    Electronic Resource
    Electronic Resource
    Interactions of deuterium with ion-irradiated SiO2 on Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4064-4071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions of deuterium with ion-irradiated SiO2 on Si were investigated during annealing in D2 gas and vacuum over the temperature range 373–1273 K. The uptake and release of D by the oxide layer were monitored using the ion-induced nuclear reaction D(3He,p)4He. Results were analyzed in terms of a new mathematical model which describes the diffusion of atomic D and molecular D2 in conjunction with trapping at irradiation defects via SiD and OD bonding. The combined body of experimental data on release is quantitatively described by the model using fitted binding enthalpies of 2.8 eV for the Si-D interaction and 3.2 eV for the O-D coupling. The model predicts a relationship between the activation barriers for trapping and detrapping which is in semiquantitative agreement with the experimental data on uptake. The same relationship is obeyed by independently reported results on the hydrogen passivation and reactivation of Si-dangling-bond defects at the SiO2-Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344964
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Ho-ion dynamics in HoxLu1−xRh4B4 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3107-3109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New μSR measurements of Ho-ion dynamics in HoxLu1−xRh4B4 are reported for x=0.02 and 0.005. These compounds are superconducting below Tc(approximately-equal-to)11 K. The measured concentration dependence of the Ho3+ spin-lattice relaxation rate Γ0 is consistent with single-ion, conduction electron scattering (the Korringa mechanism) as the dominant process. Above about 10 K, Γ0 is activated with an energy of 66 K, about 1/2 of the overall crystal-field splitting. Below about 10 K (in the superconducting state) a more gradual temperature dependence is observed, as reported previously for x=0.70 and x=0.02. This temperature dependence is not consistent with the usual exponential decay in the superconducting state. Using a model of conduction-electron-exchange scattering which includes the full crystal-field potentials, we show that a reasonably quantitative understanding of the overall temperature dependence can be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335173
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  • 5
    Electronic Resource
    Electronic Resource
    Search for cold fusion at D/Pd 〉 1 using ion implantation (1990)
    Springer
    Journal of fusion energy 9 (1990), S. 263-268 
    Details
    ISSN: 1572-9591
    Keywords: Cold fusion ; palladium ; deuterium ; ion implantation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Deuterium was introduced into palladium at atomic ratios greater than one by means of ion implantation at cryogenic temperatures, and a search was made for energetic charged particles from D-D nuclear reactions. Concentrations as high as 1.6 D/Pd were produced by 10 keV implantation at temperatures of 41 and 81 K, and the occurrence of lattice supersaturation in the Pd deuteride was indicated by a new, low-temperature stage of D redistribution. Fifteen hours of observation at low temperatures yielded no indication of energetic charged particles due to the reaction D(d,p)T or other nuclear processes. This result implies an approximate upper bound of 10−21 events/s per D atom on the reaction rate in the supersaturated deuteride. Negative results were also obtained for D-implanted zirconium and titanium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01059240
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic field dependence of impurity-induced muon depolarization in noble metals (1984)
    Springer
    Hyperfine interactions 17 (1984), S. 351-354 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have measured the magnetic field dependence of the muon depolarization rate up to 5 kOe in AuGd (350 ppm), AgGd (340 ppm) and AgEr (300 ppm). A simple model which includes both dipolar and nearest-neighbor contact interactions between the muon and the magnetic impurity does not fit the data. An axial crystal-field interaction, arising from the electric field gradient induced by the muon at the site of the impurity, is found to dominate the Hamiltonian, and may have a large effect on the field dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02065924
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    Paper (German National Licenses)
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