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  • 1
    Electronic Resource
    Electronic Resource
    Reduction of the power dissipation in silicon carbide Schottky rectifiers by a dual-metal planar structure (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-metal-planar rectifier on 6H–SiC was fabricated using Ti and Ni2Si as Schottky metals. The forward current voltage (I–V) characteristic of the dual-metal devices was comparable with that of Ti diodes. On the other hand, under reverse bias, almost the same leakage current of the Ni2Si rectifiers was achieved, i.e., a factor 1000 lower than that of Ti diodes. The fabricated diodes allowed to obtain a power dissipation of 0.37 W/cm2, significantly reduced with respect to the Ti and Ni2Si diodes dissipation. Moreover, the breakdown voltage was the same as in the planar Ni2Si diode, thus indicating that the planar structure is very efficient in avoiding electric field crowding at the titanium stripes edges. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498873
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  • 2
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial regrowth of ion beam-amorphized α-quartz (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1349-1351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxial growth of ion beam-amorphized α-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry. α-quartz single crystals were irradiated with Cs+ and Xe+ ions and annealed in air or in vacuum at 500–900 °C. Complete epitaxial regrowth has been observed in the Cs-irradiated samples, after 875 °C annealing in air. On the other hand, vacuum annealing provided only incomplete regrowth of the amorphous layer, while Xe-irradiated α-quartz could not be regrown up to 900 °C. The behavior of Cs in the recrystallization process is discussed in terms of the SiO2-network topology. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122159
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial crystallization of keV-ion-bombarded α quartz (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3611-3618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, our results on the epitaxial crystallization of ion-bombarded crystalline silicon dioxide (α quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650–875 °C. The systematic behavior of alkali ions in enhancing the regrowth rate both with decreasing ion size and increasing concentration is shown. The role of oxygen in the recrystallization was investigated by means of nuclear reaction analysis, by performing thermal treatments of the samples in 18O. A large amount of 18O diffuses inside the amorphous layer in the alkali-ion implanted samples at 600–800 °C. From the strong correlation between the migration of 18O and implanted alkali, it was possible to gain further insights into the recrystallization mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353805
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  • 4
    Electronic Resource
    Electronic Resource
    Addendum: "Solid phase epitaxial regrowth in ion-beam-amorphized α quartz" [Appl. Phys. Lett. 73, 1349 (1998)] (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1922-1922 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123961
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  • 5
    Electronic Resource
    Electronic Resource
    Oxygen migration during epitaxial regrowth in Cs+-irradiated α-quartz investigated by means of nuclear reaction analysis (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3709-3711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The migration of oxygen in ion-beam-amorphized c-SiO2 (α-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction 18O(p,α)15N for oxygen depth profiling. Only very small amounts of oxygen were observed to diffuse in crystalline or in Xe+-ion beam-amorphized α-quartz after high-temperature annealing. However, a dramatic migration of oxygen occurs in Cs+-implanted α-quartz in the same temperature range (600–900 °C), where Cs diffuses out of the amorphized layer and epitaxial recrystallization occurs. These results point out to a strong correlation of all these processes. A mechanism to explain the observed indiffusion of 18O is proposed and is related to the Cs migration and the topological modification to achieve epitaxial regrowth of the SiO2 matrix. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126757
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial crystallization of amorphous SiO2 films deposited on single-crystalline α-quartz (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2903-2905 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial α-quartz thin film could be a promising material for fabricating optical devices because of its unique optical and mechanical properties and processing advantages compared to bulk materials. This letter reports on the solid-phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates. This was achieved by high-dose Cs+-ion implantation and subsequent thermal annealing in air. Also, a thin amorphous layer produced by Si+-ion implantation on α-quartz was epitaxially regrown, thus indicating that the epitaxy is independent of the preparation history of the amorphous layer. The results are explained on the basis of network modifications induced by alkali and oxygen in the SiO2 structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125185
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