Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1349-1351
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Solid phase epitaxial growth of ion beam-amorphized α-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry. α-quartz single crystals were irradiated with Cs+ and Xe+ ions and annealed in air or in vacuum at 500–900 °C. Complete epitaxial regrowth has been observed in the Cs-irradiated samples, after 875 °C annealing in air. On the other hand, vacuum annealing provided only incomplete regrowth of the amorphous layer, while Xe-irradiated α-quartz could not be regrown up to 900 °C. The behavior of Cs in the recrystallization process is discussed in terms of the SiO2-network topology. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122159
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