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  • 1
    Electronic Resource
    Electronic Resource
    Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3772-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor-phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectroscopy and photoluminescence show that both the Si donor and acceptor concentrations are significantly reduced by the oxygen. The observed reduction of carrier concentration and the increase in Hall mobility with increasing oxygen partial pressure are mainly due to the reduction of Si impurity concentration. Although oxygen can form deep levels as indicated by the 1.4889-eV bound-exciton line in photoluminescence, the main effect of oxygen injection is to improve the material purity by suppression of the incorporation of residual Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344040
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-power, diffraction-limited-beam operation from interferometric, phase-locked arrays of AlGaAs/GaAs diode lasers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3716-3718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a single-lobe pattern requires a simple phase-corrector coating or plate. The device beam pattern as a function of the array geometry is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342601
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Watt-range, coherent, uniphase powers from phase-locked arrays of antiguided diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2070-2072 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Twenty-element near-resonant AlGaAs/GaAs arrays of antiguides have been optimized for maximum intermodal discrimination and large Strehl ratio. It is found that 1000-μm-long devices with two intracavity Talbot-type spatial filters, and a 3 to 1 ratio between element core and interelement spacing provide the best results. The intermodal discrimination is discussed for both Talbot and uniform devices. For devices with two Talbot-type spatial filters, diffraction-limited-beam operation is obtained to 1 W pulsed power, and operation in a beam with lobewidth 1.5× diffraction limit is obtained to 2 W and 19× threshold. cw diffraction-limited-beam operation is obtained to 0.5 W, limited by thermal considerations. Uniform devices operate in beams with lobewidth ≈3× diffraction limit to 5 W and 45× threshold. At 5 W total output the coherent uniphase power is 1.6 W, and the coherent power in the main lobe is 0.94 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105013
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    cw high-power diffraction-limited-beam operation from resonant optical waveguide arrays of diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 22-24 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monolithic phase-locked resonant arrays of antiguides, resonant optical-waveguide (ROW) arrays, have been optimized for efficient in-phase-mode operation. Diffraction-limited, in-phase-mode continuous-wave (cw) operation is obtained from 20-element uniform arrays to 250 mW output power, with (front facet) external differential quantum efficiencies of 41%. Single longitudinal mode operation is observed below 100 mW cw. In-phase-operating devices with and without Talbot-type spatial filters are compared, and it is found that for ROW arrays Talbot-type spatial filters are not required.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104425
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    High-power, narrow single-lobe operation from 20-element phase-locked arrays of antiguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2060-2062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure in-phase-mode operation is obtained from 20/21-element AlGaAs/GaAs antiguided arrays grown by two-step metalorganic chemical vapor deposition. Oscillation of out-of-phase modes is substantially suppressed by a built-in spatial filter: two sets of noncollinear antiguides separated by a 50-μm-long laterally unguided region, corresponding to the half-Talbot distance. Design considerations for 20- vs 10-element arrays are discussed. Diffraction-limited-beam operation (i.e., 0.8° lobewidth) is obtained to 1.5×threshold (90 mW, both facets). Beams with 1.3° lobewidth (1.6×diffraction limit) are obtained at 3×threshold and 300 mW (both facets). Devices with optimized facet coatings operate in a single, 1.5°-wide lobe (i.e., 1.8×diffraction limit) at 330 mW front-facet emitted power. The main lobe contains 80–87% of the total power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102105
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Resonant optical transmission and coupling in phase-locked diode laser arrays of antiguides: The resonant optical waveguide array (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2183-2185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform linear arrays of antiguides have 100% optical transmission between elements when the interelement spacing is an integer number of leaky wave half-wavelengths in the lateral direction. Resonant in-phase-mode and out-of-phase-mode coupling occurs when the number of half-wavelengths is odd and even, respectively. Such devices are called resonant optical waveguide (ROW) arrays. The discrimination between the resonant array mode and adjacent array modes reaches a maximum in close proximity to the resonance. An AlGaAs/GaAs ROW diode laser array operating close to resonance is demonstrated. Devices with virtually uniform near-field intensity profiles operate in stable, diffraction-limited in-phase modes to drive levels in excess of three times threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101159
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Diffraction-limited-beam, high-power operation from X-junction coupled phase-locked arrays of AlGaAs/GaAs diode lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1366-1368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel type of phase-locked array is demonstrated. The device is a ten-element AlGaAs/GaAs array with both evanescent wave coupling as well as coupling via X-type junctions. The array selects and maintains operation in the highest order array mode of a ten-element device: mode L=10. Threshold currents are ∼300 mA. Diffraction-limited-beam operation is achieved to 2.8×threshold and ∼200 mW (front facet of devices with optimized facet coatings). The beam lobewidths remain under 1.5×diffraction limit to 6.3×threshold and 300 mW (both facets of uncoated devices). Near-field intensity patterns confirm the intrinsic stability of high-order array modes against gain spatial hole burning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99980
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Stable, single-(array)-mode operation from phase-locked, interferometric arrays of index-guided AlGaAs/GaAs diode lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 266-268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-array-mode (L=8) oscillation is achieved with virtually diffraction-limited beams to three times above lasing threshold, and with beamwidths 1.5 times the diffraction limit at 4.7 times above lasing threshold and 130 mW output power per uncoated emitting facet. The arrays are 10/11-element wide-waveguide-interferometric (WWI) AlGaAs/GaAs lasers grown by liquid-phase epitaxy over channeled substrates. Selection of the L=8 mode is a consequence of two mode-dependent loss mechanisms: transverse antiguiding between elements and radiation losses in the interferometer. Near-field pattern analysis indicates that the (high-order) array mode is self-stabilizing with increasing drive above threshold. Simple means of achieving single-lobe operation are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99489
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  • 9
    Electronic Resource
    Electronic Resource
    High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1959-1961 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical-cavity surface emitters with rear mirrors made of conductive semiconductor stack reflectors (Rr =98%) were developed. Current confinement is obtained via an etch and regrowth technique with no need for dielectrics. Peak powers of 120 mW were achieved at room temperature. The external differential quantum efficiency is 15%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101184
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    High-power, in-phase-mode operation from resonant phase-locked arrays of antiguided diode lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 10-12 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resonant phase-locked array of antiguides is demonstrated for the first time. A 10/11 element AlGaAs/GaAs antiguided array is grown by two-step metalorganic chemical vapor deposition. Longitudinally, the structure consists of two noncollinear sets of antiguides separated by a half-Talbot distance, an ensemble that acts as a spatial filter. Out-of-phase-mode operation is suppressed both by this diffractive-type spatial filter and by large interelement loss. Resonant in-phase-mode operation is a result of the interelement spacing corresponding to one leaky-wave half wavelength in the lateral direction. Near the in-phase-mode resonance, array modes adjacent to the in-phase-mode are discriminated against because they have large radiation losses in the antiguided structure and significant edge diffraction losses in the spatial filter. Stable, diffraction-limited in-phase-mode beam patterns are achieved to 10 times threshold and 450 mW output power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101741
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    Paper (German National Licenses)
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