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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 99-100 (July 2004), p. 109-116 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The paper describes the use of an in-situ microscopy technique, which combinestransmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of individual silicon and germanium nanowires. Additionally, the formation of ordered arrays of size-monodisperse silicon and germanium nanowires within mesoporous silica powders and thin films using a supercritical fluid inclusion phase technique is described. In particular, we demonstrate ultra high-density arrays of germanium nanowires, up to 2x 1012 wires per square centimetre. These matric embedded nano-composite materials display unique optical properties such as intense room temperature ultraviolet and visible photoluminescence
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2828-2834 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that electron energy-loss spectroscopy in transmission electron microscopy is a useful technique for analysis of the high-frequency dielectric properties on a microstructural level. Compositional variations and interfacial elastic strain of epitaxial (001) SrTiO3 thin films had a small effect on the imaginary part, ε2, of the complex dielectric function, εr(E). Changes in the low-frequency dielectric function, between Sr deficient and stoichiometric films, were much larger compared to the changes in the high-frequency function. Improved film stoichiometry and absence of strain caused the absolute value of ε2 to approach that of a stoichiometric single crystal bulk sample. Simultaneously, the low-frequency dielectric function of the films improved. The electronic polarizability, αe, was also extracted from the dielectric function. Indications were found that strain and compositional deviations from the bulk value, resulted in decreased ability to withstand dielectric breakdown. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3976-3983 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a YBa2Cu3O7−x buffer layer on the quality of rf magnetron sputtered epitaxial (001) SrTiO3 thin films on a LaAlO3 substrate has been investigated using high resolution transmission electron microscopy. Magnetron sputtered SrTiO3 films generally exhibit a columnar subgrain morphology. By using a 75 nm thick YBa2Cu3O7-x buffer layer the subgrain boundary area was reduced considerably compared to single layer films. Subgrain widths around 130 nm were observed, which corresponded to an 80% reduction of the subgrain boundary area. The density of misfit dislocations was also reduced by 80%. By using a YBa2Cu3O7−x buffer layer, the dielectric tunability increased 30%, to a value of 1.43 (at U=16.5 V/μm, 2 MHz, 77 K). The influence of interfacial strain and misfit dislocations on the subgrain structure, and corresponding effect on the dielectric constant εr, is elucidated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1172-1172 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4884-4890 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sr-deficient and stoichiometric epitaxial (001) SrTiO3 films, deposited on (110)rhombohedral LaAlO3 substrates by rf magnetron sputtering, have been characterized using high-resolution transmission electron microscopy. A subsequent heat treatment in oxygen had a positive influence on the dielectric properties. Sr-deficiency had a large negative impact on the microwave dielectric constant of the films. These changes were correlated to changes in lattice parameters. In all samples, at the film/substrate interface, were misfit dislocations present. The residual elastic strain compressed the SrTiO3 unit cell in the substrate surface plane and expanded it an equal amount in the [001] direction. X-ray diffraction revealed that the tetragonal distortion, due to the mismatch strain, was concentrated to a narrow region closest to the film/substrate interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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