ISSN:
1432-0630
Keywords:
GaAs
;
Liquid phase epitaxy
;
High resistivity layers
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The preparation of high-resistivity undoped GaAs layers is described. The layers were epitaxially grown from the liquid phase on semi-insulating GaAs substrates. Up to 106 Ωcm in resistivity were obtained. The layers are highly compensated. Their temperature behaviour resembles that of Cr-doped semi-insulating bulk material. Additionally it is reported on the doping effect of Cr, Fe, Co, and Ni in the liquid phase epitaxy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00936024
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