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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5352-5359 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical model describing the spatial resolution limitations on localized band edge photoluminescence (PL) and trap-based luminescence, obtained through near-field scanning optical microscopy (NSOM), is presented. Calculations were carried out for NSOM measurements performed in the tip illumination mode. Variations in surface recombination velocity, probe aperture, and the physical structure on the achievable spatial resolution were investigated. These calculations indicate that the drift of photogenerated minority carriers to the surface narrows their lateral distribution, leading to improved spatial resolution. There is a weak dependence on the spatial resolution of the photoluminescence on the tip aperture. An order of magnitude reduction of the illuminating tip aperture resulted in only a minor improvement in the lateral spatial resolution of the emitted PL. The spatial resolution of the localized trap luminescence is presented within the context of typical material structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 40 (1994), S. 1535-1548 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A new counterflow jet reactor has been designed to study the purely homogeneous kinetics of endothermic reactions. The reactor consists of two vertical, coaxial, counterflowing, laminar jets and radial-flow exit region. It can be used to generate a reaction zone near the stagnation point and away from walls, thus eliminating the possibility of surface reactions. One jet is heated and contains only a suitable carrier gas such as hydrogen and nitrogen, while the other is unheated and contains the compound(s) under study diluted in the same carrier gas. A 2-D model of the process has been used to simulate the thermal decomposition of tertiary-butyl-arsine, a precursor for metal-organic chemical vapor deposition of GaAs films. Performance diagrams based on Reynolds and Demköhler numbers were constructed to identify optimal operating conditions and to demonstrate the feasibility of the technique. This reactor appears to be an attractive choice for studies of the purely homogeneous kinetics of endothermic reactions at pressures close to atmospheric.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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