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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4994-4999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen ions were implanted into ZnSxSe1−x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N2 ambient. Schottky structures employing the implanted p-type ZnSxSe1−x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage (I–V), current–voltage temperature (I–V–T), and high frequency capacitance–voltage (C–V) measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission. C–V measurement proved the maximum doping concentration to be around 1017 cm−3 after ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2270-2272 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of the diluted magnetic semiconductor (DMS) Zn1−xFexSe (0〈x≤0.22) by metalorganic vapor phase epitaxy (MOVPE) is reported. The films were grown on (100) GaAs substrates in a vertical stagnation flow reactor with a specially designed inlet to minimize prereactions between the groups II and VI precursors. The precursors used in this study were (CH3)2Zn:N(CH2H5)3, Fe(CO)5, and H2Se diluted in H2 carrier gas. The epilayers were characterized by x-ray diffraction (XRD), Raman, absorption, and x-ray photoelectron spectroscopies (XPS). Typical growth rates were from 3–4 μm/h, which are significantly higher than those obtained by molecular beam epitaxy. Thus, in addition to the growth of DMS multilayer structures, MOVPE appears to be very promising for efficient growth of thick DMS films for Faraday magneto-optical applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 40 (1994), S. 1535-1548 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A new counterflow jet reactor has been designed to study the purely homogeneous kinetics of endothermic reactions. The reactor consists of two vertical, coaxial, counterflowing, laminar jets and radial-flow exit region. It can be used to generate a reaction zone near the stagnation point and away from walls, thus eliminating the possibility of surface reactions. One jet is heated and contains only a suitable carrier gas such as hydrogen and nitrogen, while the other is unheated and contains the compound(s) under study diluted in the same carrier gas. A 2-D model of the process has been used to simulate the thermal decomposition of tertiary-butyl-arsine, a precursor for metal-organic chemical vapor deposition of GaAs films. Performance diagrams based on Reynolds and Demköhler numbers were constructed to identify optimal operating conditions and to demonstrate the feasibility of the technique. This reactor appears to be an attractive choice for studies of the purely homogeneous kinetics of endothermic reactions at pressures close to atmospheric.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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