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  • 1
    Electronic Resource
    Electronic Resource
    Energy distribution of trapping states at grain boundaries in polycrystalline silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3350-3355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to obtain the energy distribution of traps at grain boundaries in polycrystalline silicon films from the activation energy of resistivity measured as a function of doping concentration is proposed. The energy distribution of trapping states in the energy gap for plasma-hydrogenated and nonhydrogenated polycrystalline silicon films doped with boron are determined: nonhydrogenated films have a Gaussian distribution with a peak at the midgap, and after plasma hydrogenation the peak at the midgap has diminished. The validity of the monoenergetic trap model applied to the conduction in nonhydrogenated and plasma-hydrogenated polycrystalline silicon films is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350930
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of hydrogen passivation on the electrical conduction in undoped polycrystalline silicon films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 754-757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the hydrogenation treatment on the conduction mechanism in the undoped polycrystalline silicon films near room temperature was investigated. The two current components are predicted from the temperature dependence of the conductivity in the films. We consider the hopping current in addition to the conventional thermionic (or drift) current. We have also found the hydrogenation induced increase phenomena of resistivity in the undoped polycrystalline silicon films and its activation energy, and qualitatively explain those by the decrease of the hopping current, which would relate to the band tail states, and that of the thermionic current, which would relate to the midgap states. From the analysis of the current components, it takes longer time for the passivation of the band tail states than that of the midgap states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364216
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  • 3
    Electronic Resource
    Electronic Resource
    High quality hydrogenated amorphous silicon films by windowless hydrogen discharge (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 484-486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were deposited by the direct photolysis of disilane using windowless hydrogen discharge. Electrical and optical properties of the films have been investigated. The photosensitivity (σph/σd) is about 107 in the films prepared at 250 °C, better than that of films obtained by conventional rf plasma chemical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103627
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  • 4
    Electronic Resource
    Electronic Resource
    Oxynitridation of silicon by remote-plasma excited nitrogen and oxygen (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 800-802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct oxynitridation of silicon is performed by remote-plasma excited nitrogen and oxygen gaseous mixtures at 550 °C. Nitrogen atoms are mainly incorporated near the SiO2–Si interfaces with Auger electron spectroscopy measurements. We have controlled the peak density of nitrogen up to at least several atomic percents, varying the partial pressure of nitrogen and oxygen. The supply of active oxygen species is required for the growth of oxynitride films, but their excess supply reduces the density of nitrogen in the films. The proposed technique is a unique process to obtain high quality ultrathin dielectrics. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116537
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  • 5
    Electronic Resource
    Electronic Resource
    Plasmaless cleaning process of silicon surface using chlorine trifluoride (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1119-1121 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasmaless etching using ClF3 gas around room temperature has been investigated for the silicon substrates with the various thicknesses of native oxide. The native oxide can be removed with ClF3 gas. A specular surface is obtained by ultraviolet light irradiation which remarkably accelerates the removal of the native oxide without changing the etch rate of silicon. The etched surface is analyzed with Auger electron measurement, indicating the existence of Cl atoms on it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102586
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  • 6
    Electronic Resource
    Electronic Resource
    Synchrotron radiation assisted deposition of carbon films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1644-1646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photochemical vapor deposition of carbon films from n-butane gas has been successfully done, for the first time, at room temperature using synchrotron radiation as a light source. The deposited films are hydrogenated amorphous carbon films with sp3 bonds. The deposition rate increases with negative bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102225
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  • 7
    Electronic Resource
    Electronic Resource
    Degradation of hydrogenated amorphous silicon films induced by irradiation of synchrotron radiation light (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2552-2553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were rapidly degraded by the irradiation with vacuum ultraviolet light. Photoconductivity of the films decreases in inverse proportion to irradiation time of synchrotron radiation light. A direct bond-breaking model is proposed for the degradation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342779
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  • 8
    Electronic Resource
    Electronic Resource
    Annealing effect on the resistivity of polycrystalline silicon films passivated with plasma-deposited silicon-nitride films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1117-1120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal annealing effect on resistivity is investigated for polycrystalline silicon films passivated with plasma-enhanced chemically vapor deposited silicon-nitride (p-SiN) films. The resistivity in the heavily doped polycrystalline silicon films has a minimum value at an annealing temperature of approximately 500 °C, and the resistivity in the lightly doped films monotonically increases with the increase of annealing temperature. The dependence of the resistivity on annealing temperature is explained in terms of the variations of the density and the energy level of the traps at the grain boundaries, which are caused by the adsorption or the decomposition of hydrogen atoms. These conclusions are obtained by comparing the dependence in the polycrystalline silicon films with p-SiN films with that in the plasma-hydrogenated polycrystalline silicon films without p-SiN films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340017
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  • 9
    Electronic Resource
    Electronic Resource
    Conduction mechanism of high-resistivity polycrystalline silicon films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2010-2013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of polycrystalline silicon films deposited by low-pressure chemical vapor deposition and doped by boron, phosphorus, or arsenic with ion implantation, are investigated, and it is found that the resistivity versus donor concentration curve has a peak point for the completely depleted samples. An improved conduction model for the high-resistivity polycrystalline silicon films is proposed. The theoretical results are in reasonable agreement with experiment. It is shown that the trap level located at the grain boundary exists at 0.51 eV above the valence-band edge and that the hole current dominates the whole current through the films for all of the lightly doped samples, even for the donor-doped samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334387
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  • 10
    Electronic Resource
    Electronic Resource
    I-V characteristics of polycrystalline silicon with n+pn+ structure (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1190-1193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The I-V characteristics of polycrystalline silicon with n+pn+ structure are experimentally and theoretically investigated. As the applied voltage increases, a sublinear region appears following the ohmic region in the I-V characteristics. When the applied voltage V increases further, the current increases rapidly, and is finally proportional to V2. We propose a model to explain these characteristics. According to the model, the recombination-generation current flows through the films in a small applied voltage. At large applied voltages, electrons are injected from the n+p junction on the cathode side and holes are injected by tunneling from the n+p junction on the anode side; consequently double injection current flows. The calculated results are in reasonable agreement with experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334515
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