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1

Digitale Medien

A surface recombination model applied to large features in inorganic phosphor efficiency measurements in the soft x-ray region (1991)

Benitez, E. L. ; Husk, D. E. ; Schnatterly, S. E. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 3256-3260

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The photoluminescent quantum efficiencies of the inorganic phosphors Y2O2S:Eu, Y2O3:Eu, La2O2S:Tm, Gd2O2S:Tb, and Sr5Cl(PO4)3:Eu have been measured in the range 17 to 450 eV. The optical properties of these phosphors from 2 to 160 eV have been determined from inelastic electron scattering measurements. Using a model which involves nonradiative recombination at the surface of the material, we relate photoluminescent efficiency to optical absorption properties, and find that surface recombination is the predominant source of efficiency loss for these materials in the soft x-ray range. From the model, we obtain values for the diffusion length, surface recombination velocity, and bulk quantum efficiency of these materials.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.350331

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2

Digitale Medien

Response of photodiodes in the vacuum ultraviolet (1991)

Husk, D. E. ; Tarrio, C. ; Benitez, E. L. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 3338-3344

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have measured the responses of four commercial photodiodes in the vacuum ultraviolet from 20 to 600 eV and have also measured the inelastic-electron-scattering spectra of the materials contained in the diodes from 0 to 260 eV. Three of the diodes are silicon: an enhanced channel device, an x-ray-stabilized silicon diode, and a p-i-n diode. The fourth is a gallium arsenide phosphide Schottky diode. The diode response has been modeled by considering absorption through the surface layer and inelastic surface recombination. The model produces an excellent description of the measured responses. From our analysis we have obtained reasonable values for the number of electrons produced per eV of incident radiation, the thicknesses of the surface layers, the surface recombination velocities, and the average diffusion lengths of the minority carriers. The highest efficiency is obtained for a silicon x-ray-stabilized diode followed by the gallium arsenide phosphide diode. We find that both of these diodes make excellent, stable soft-x-ray detectors.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.349268

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3

Digitale Medien

A low-temperature sample mount for an inelastic electron scattering spectrometer (1990)

Tarrio, C. ; Schnatterly, S. E. ; Benitez, E. L.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 61 (1990), S. 2704-2706

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ISSN: 1089-7623

Quelle: AIP Digital Archive

Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik

Notizen: A continuously operable low-temperature (10–20 K) sample mount for a solid-state inelastic electron scattering spectrometer is described. The cooling is achieved by a closed-cycle gas phase He refrigerator. Because the entire sample chamber is at a potential of 300 kV, it must be isolated from ground, requiring computer automation for positioning, and insulating plumbing for the helium. The motion control has a detachable coupling that allows for complete thermal isolation from room temperature. Details and problems encountered in the design are described.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1141865

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4

Digitale Medien

Surface recombination effects in soft x-ray efficiencies (1991)

Benitez, E. L. ; Husk, D. E. ; Tarrio, C. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 396-398

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have measured the soft x-ray efficiencies of a silicon p-i-n photodiode and a La2O2S:Tm phosphor over a broad energy range. We have also measured the inelastic electron scattering spectra of the constituent materials and obtained values of optical absorption coefficients versus energy. The energy dependence of the efficiencies is well explained by a model based on surface recombination of electron hole pairs, and the quality of data which can now be obtained from synchrotrons makes possible quantitative fits from which we obtain diffusion length, surface recombination velocity, and bulk quantum efficiency.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.105442

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5

Digitale Medien

Observation of second-order kinetic damage in sodium salicylate due to soft x rays (1991)

Husk, D. E. ; Tarrio, C. ; Benitez, E. L. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 2052-2054

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have observed the dose dependence of the bulk quantum efficiency for luminescence of sodium salicylate as a function of the photon energy from 7 to 150 eV. We show that the damage is a second-order or higher kinetic process in the number of electron-hole pairs and is not reversible. We predict that the threshold for damage occurs at 7.2 eV, or twice the band gap of sodium salicylate.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.106129

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