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Digitale Medien

Surface recombination effects in soft x-ray efficiencies (1991)

Benitez, E. L. ; Husk, D. E. ; Tarrio, C. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 396-398

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have measured the soft x-ray efficiencies of a silicon p-i-n photodiode and a La2O2S:Tm phosphor over a broad energy range. We have also measured the inelastic electron scattering spectra of the constituent materials and obtained values of optical absorption coefficients versus energy. The energy dependence of the efficiencies is well explained by a model based on surface recombination of electron hole pairs, and the quality of data which can now be obtained from synchrotrons makes possible quantitative fits from which we obtain diffusion length, surface recombination velocity, and bulk quantum efficiency.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.105442

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