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  • 1
    Electronic Resource
    Electronic Resource
    Optical constants of GaxIn1−xP lattice matched to GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3416-3419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants of Ga0.51In0.49P have been determined from 0.8 to 5.0 eV using variable-angle spectroscopic ellipsometry measurements at room temperature. The metal-organic vapor-phase-epitaxy-grown samples were x-ray analyzed to confirm lattice matching to the GaAs substrate. The effects of the native oxide were numerically removed from the data to determine the intrinsic optical constants. This is important because the optical constants reported become generally useful for modeling multiple-layer structures. A Kramers–Kronig analysis was used to reduce interference-related fluctuations in the below-gap refractive index. Near the band edge a mathematical form for excitonic absorption was included. Critical point energies were extracted using a numerical second-derivative fitting algorithm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358632
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  • 2
    Electronic Resource
    Electronic Resource
    Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2906-2911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry over the spectral range from 700 to 3000 cm−1 and from 1.5 to 3.5 eV is used to simultaneously determine phase and microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering on (100) silicon. The results are obtained from a single microstructure-dependent model for both infrared and visible-light thin-film anisotropic dielectric functions. The optical behavior of high c-BN content thin films is described by an effective medium approximation. We obtain the amount of h-BN within high c-BN content thin films. A thin oriented nucleation layer between the silicon substrate and the high c-BN content layer is demonstrated. The preferential arrangement of the grain c axes within the h-BN thin films are found to be dependent on the growth parameters. The results from the infrared and visible spectral range ellipsometry model are compared to each other and found to be highly consistent. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366123
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    Paper (German National Licenses)
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