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'Top Down' Approaches for the Study of Single-Cells: Micro-Engineering and Electrical Phenotype (2006)

Senez, Vincent ; Akalin, T. ; Arscott, S. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Advances in science and technology Vol. 53 (Oct. 2006), p. 97-106

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ISSN: 1662-0356

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Natural Sciences in General , Technology

Notes: Single-cell analysis is a very important field of research and is currently at the frontier ofphysical and biological sciences. Understanding how the phenotype of a single-cell arises from itsgenotype is a complex topic. Currently, the prevailing paradigm to analyze cellular functions is thestudy of biochemical interactions using fluorescence based imaging systems. However, theelimination of the labelling process is highly desirable to improve the accuracy of the analysis.Living cells are electromagnetic units; in as much they use electric mechanisms to control andregulate dynamic processes involved in inter alia signal transduction, metabolism, proliferation anddifferentiation. Recent developments in micro- and nanofabrication technologies are offering greatopportunities for the analysis of single cells; the combination of micro fluidic environments, nanoelectrodes/wires and ultra wide band electromagnetic engineering will soon make possible theinvestigation of local (submicrometer scale) dynamic processes integrating several events atdifferent time scales. In the paper, we present recent approaches which aim at investigating singlecellswith the help of MEMS and NEMS (Micro and Nano Electro Mechanical Systems) and ultrawide band (DC-THz) electromagnetic characterization techniques

Type of Medium: Electronic Resource

URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.53.97.pdf

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Analysis and application of a viscoelastic model for silicon oxidation (1994)

Senez, Vincent ; Collard, Dominique ; Baccus, Bruno ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 3285-3296

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The numerical modeling of the oxidation of silicon is analyzed from a nonlinear viscoelastic approach. Its mechanical and stress dependent parameters are determined for silicon dioxide and nitride. The study focuses on the rheological behavior of the materials. The two dimensional simulations of silicon cylinders oxidation and local oxidation of silicon processing reveal that at 1000 °C, a nonlinear viscous modeling is equivalent to the nonlinear viscoelastic one. But, for lower temperatures, the discrepancies between these two models, observed in the stress calculation and final oxide shape, demonstrate the necessity for a complete nonlinear viscoelastic formulation. Finally, the calibrated model is used to study the growth of a recessed isolation structure. The investigations quantify the influence of geometrical parameters of the silicon groove on the shape of the final isolation oxide (e.g., parameters such as the silicon overetch under the pad oxide, the depth of silicon etching, the slope of the silicon sidewall and the silicon concave corner rounding).