ISSN:
1432-0630
Keywords:
PACS: 72.20.Jv; 73.20.-r; 78.47.+p
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
0.4 Se0.6 microcrystals was investigated by using time-resolved differential transmittance spectroscopy. The electron trapping at microcrystal–glass interfaces was found to occur within less than 1 ps after photoexcitation. At low excitation energy density, the excited electrons are trapped at point defects distributed over the nanocrystal interfaces. Such electrons give rise to long-lived photoinduced absorption with a lifetime of 3.2 ns. On the other hand, at high excitation energy density, transient absorption with a fast (60 ps) and simultaneously a slow decay component (3.2 ns) was observed. This short-lived photoinduced absorption is attributed to the electrons trapped at the shallow trap states of the semiconductor–glass interfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050502
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