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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5901-5903 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single layer FeN films with low coercivity and low residual stress were prepared on Corning 0211 glass and Si substrates using rf diode sputtering without postannealing. Substrates and a small amount of nitrogen in the film had a significant effect on the magnetic properties and residual stress of FeN films. The residual stress in the pure Fe films showed tensile characteristics due to thermal stress. The stress decreased with increasing N2/Ar flow ratio and passed a zero point at a flow rate ratio of ∼3.5%, accompanied with a low coercivity. The stress changed to compressive with further increasing nitrogen in the lattice. The tensile-to-compressive transition in residual stress can be explained by the increase in lattice constant in FeN films. The lattice constant increased with increasing nitrogen flow during deposition, which was probably due to more nitrogen incorporation in the bcc Fe lattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used high-resolution transmission electron microscopy to compare the nanostructures of ion-beam and dc magnetron sputter-deposited giant magnetoresistive (GMR) spin valves and to correlate nanostructure with magnetic properties. Very low coercivities and strong exchange bias (〈8 Oe, 125 Oe) were achieved in ion-beam-deposited spin valves of the form NiFe(50)/Co(20)/Cu((approximately-greater-than)25)/Co(20)/NiFe(50)/FeMn(150)/Ta(30 A(ring)); these were compared with typical dc magnetron deposited structures of the same kind, both with and without a Ta seed layer, which exhibited similar and poorer exchange biasing but superior GMR ratios (to 8%.) Cross-sectional and plane-view samples were prepared of all three structures and examined by high-resolution electron microscopy. Near-perfect (111)-textured fcc metal and c-axis hcp Co columnar grains were revealed in the ion beam deposited sample, while some (10°) dispersion of this texture and random grain orientations were observed in the Ta-seeded and unseeded dc magnetron sputter-deposited samples, respectively. No amount of the α-FeMn (A12) phase was observed in any of the films. Exchange bias strengths and coercivity of the top Co/NiFe/FeMn layers thus correlate strongly with the degree of (111) texture. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4828-4830 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for measuring the read-back transfer function of a magnetic recording system is proposed. For this method, square wave patterns are recorded over a range of linear densities. The resulting read signals should exhibit certain superposition properties if the read process were linear. The transfer function of a magnetoresistive (MR) head distorts read-back signals and makes the read process nonlinear. The inverse transfer function is modeled using an arbitrary function such as a polynomial or cubic spline. This model is then used to linearize the distorted read-back signals. Superposition properties are used to evaluate the accuracy of this correction and optimize the parameters of the model. The transfer function is then obtained directly from the optimum inverse transfer function. The effectiveness of the proposed method is confirmed by comparing the read-back transfer function obtained experimentally using this method and a MR read head with a direct measurement of the transfer function of the same read head. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4007-4007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The materials options to combine high giant magnetoresistance (GMR) ratios with soft magnetic properties have been relatively few, with NiFe providing low-field switching in the great majority of studies. These NiFe layers tend to be hardened appreciably when directly exchange coupled to Co to provide higher GMR ratios, as in (Ta)/NiFe/Co/Cu/Co/NiFe/FeMn spin valves. We propose magnetically soft, amorphous CoZr as a replacement couple to Co in these and other structures. While the high resistivity of amorphous films discourages their use as a single switching element, it favors their use as the drive layer for Co in a spin valve. Our transport simulations, using the Camley–Barnas model modified by Dieny,1 indicate that GMR ratios fall off much less steeply with increasing a-CoZr drive layer thickness than with NiFe drive layer thickness. Since lower coercivities are expected for higher fractions of the drive material, CoZr-based spin valves show promise in combining soft properties and high GMR ratios. We have demonstrated the combination of magnetic softness and high GMR ratio in our own CoZr-based spin valves. A free layer coercivity of 7.2 Oe and GMR ratio of 6.4% were achieved in a nominal structure of NiO(400)/Co(50)/Cu(20)/Co(25)/CoZr(200AA). Differential coercivity structures were deposited as well, using Cr underlayers to induce hardness of the bottom Co. An identical "active layer" structure of the form SiO2/Cr/Co(50)/Cu(20)/Co(25)/CoZr(200AA) demonstrates GMR ratios as high as 4.9%; removal of the interfacial Co layer reduces the GMR ratio to 2.8%, in accordance with our expectations. Discussion of optimization and detailed structural analysis will be presented in the full paper.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4507-4509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that the soft magnetic properties of FeN/AlN laminated films do not degrade on sloping surfaces. The easy axis coercivities of FeN/AlN multilayer films are approximately 1.5 Oe and have little variation with slope angle, α. The anisotropy fields slightly vary from 13 to 17 Oe when the slope angles (α) change from 0° to 60°. In contrast, single layer FeN films show a significant degradation of soft magnetic properties with the slope angle. Residual stress does not have a significant correlation with magnetic properties. The large coercivities and saturation fields in the single layer FeN films can be ascribed to a change in the (110) texture of the films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7345-7348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a technique to measure directly the extent of surface scattering in giant magnetoresistance (GMR) spin valves. By monitoring both resistance and magnetoresistance during deposition, we may quantify any discontinuous changes in electron scattering associated with the formation of a given surface. Our technique is applied to the case of noble metal overlayer deposition (Ag and Cu) on NiO/Co/Cu/Co spin valves. We find no evidence to support the establishment of a specularly reflecting surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2528-2530 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Si/Ta/Fe55Ni45/FeMn/Fe55Ni45/Al2O3/Fe55Ni45/Ta spin-dependent tunneling junctions, in which the tunneling barrier is formed by plasma oxidation. The as-deposited Fe55Ni45/FeMn bilayer has a surface exchange energy of 0.13 erg/cm2. A maximum tunneling magnetoresistive ratio of 16.5% is obtained in the junctions. We also developed an in situ resistance measurement technique to monitor tunneling barrier thickness during plasma oxidation. The plasma oxidation data are fitted to an oxide growth model based on cation hopping current and sputtering. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Nutrition 12 (1992), S. 327-343 
    ISSN: 0199-9885
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Phytochemistry 26 (1987), S. 561-564 
    ISSN: 0031-9422
    Keywords: COSY ; Patrinia gibbosa ; Valerianaceae ; X-ray crystallographic analysis. ; gibboside ; iridoid glucoside
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Vacuum 42 (1991), S. 1037 
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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