ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In order to improve the crystal quality of MBE-grown GaN layers we employed a hightemperature growth process and enhanced the lateral overgrowth. The grain size of the GaN layer wasenlarged up to 2 "m in diameter. Significant improvement in the XRD characteristics was found, andthe FWHM value of the asymmetric (10-12) XRD ω-scan peak became less than 400 arcsec when thelayer thickness was 3 "m. Further, to planarise the surface, the low temperature gallium-rich growthprocess was employed and the large grooves between the grains vanished
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1493.pdf
Permalink