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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2902-2908 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of electron swarms in gases in time-varying ramp electric fields is investigated using a Monte Carlo simulation. In particular, we consider the case of swarms in chlorine gas. Swarm parameters as a function of instantaneous E/N(E is the electric field and N is the gas number density) for different dE/dt are determined. At higher dE/dt, all the parameters as a function of E/N are shifted to larger E/N when compared to the steady-state case. The drift velocity curve develops a peak which shifts to higher E/N and increases in magnitude as dE/dt is increased. Next, we pay attention to the definition of the swarm parameters, where the parameters derived from kinetic theory and by analogy to experiment are compared. For the high dE/dt cases, differences in the swarm parameters at the same E/N values are caused by the inertia of the electrons and their transient beam-like high drift velocity, while discrepancies due to the difference between the definitions in the kinetic theory and in the analogy to experiment appear significantly. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 234-238 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of hydrogenated amorphous silicon (a-Si:H) films is performed by low-frequency (50 Hz) plasma-enhanced chemical-vapor deposition (PECVD). The results show that the undoped a-Si:H films deposited at a substrate temperature of 200 °C are high-quality films comparable to those deposited by conventional rf PECVD at a substrate temperature of 300 °C. The photoconductivity and dark conductivity of the films are 4 × 10−4 S/cm and 5 × 10−9 S/cm respectively. The activation energy is 0.78 eV and the optical gap is 1.8 eV. Furthermore, it is possible to control the dark conductivity and activation energy by doping with substitutional impurities of boron and phosphorus. These properties are very similar to those of the a-Si:H films deposited by conventional rf PECVD in the optimum substrate temperature range from 250 to 300 °C. These results show that the 50 Hz PECVD can deposit high-quality a-Si:H films.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 447-449 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous carbon (a-C:H) films were prepared at room temperature by low-frequency (50-Hz) plasma chemical vapor deposition using CH4 and H2 . The a-C:H films were transparent, highly resistive, and very uniform. Infrared absorption measurements, as well as Raman spectroscopy, indicated that the C bonding in the a-C:H films was predominantly sp3 . Moreover, the optical band gap of the a-C:H films was measured.
    Type of Medium: Electronic Resource
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