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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 848-850 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of substrate misorientation on surface morphology of CdTe homoepitaxial films deposited by organometallic vapor phase epitaxy was investigated by deposition onto a substrate polished in the shape of a spherical cap that exposed misorientations up to 15° from the [100] pole. Hillock formation was suppressed for misorientations between 2.5° and 4.5° from the [100] pole towards the nearest {111} Te planes, whereas tilt towards the nearest {111}Cd planes resulted in only a slight improvement in surface morphology. A commonly used direction for misorienting substrates, towards the nearest {110} planes, reduced the size and density of the hillocks but did not completely suppress their formation. Double-crystal x-ray rocking curves indicated that high crystalline quality was obtained near the (100) plane, and that misorientations towards the nearest {111}Te planes did not significantly degrade the quality. Arguments have been developed to rationalize these observations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7216-7218 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exchange biasing properties of the NiFe/IrMn exchange couple were investigated by varying the IrMn composition and sputtering conditions. At a composition of Ir20Mn80 an exchange field of ∼60 Oe and a coercivity of 8 Oe were obtained for the structure Si/Ta-75 Å/NiFe-250 Å/IrMn-500 Å. The maximum exchange field obtained was similar for rf diode, rf magnetron, and dc magnetron sputtering of the IrMn. X-ray diffraction measurements showed that the crystalline texture was (111) for both the NiFe and IrMn, but a strong crystalline texture did not necessarily correspond to a large exchange field. The interfacial exchange energy, Jk, was evaluated to be 0.145 erg/cm2 and the minimum thickness of IrMn needed to support an exchange field was 75 Å. The blocking temperature was measured to be a function of the IrMn thickness and was in the range of 220–250 °C for thicknesses 〉200 Å. Below this, the blocking temperature rapidly decreased to a value of 130 °C at 75 Å of IrMn. Corrosion testing was done in a Battelle Class II type corrosive environment. Using the exchange field as a figure of merit, it was found that the IrMn corrosion properties were only slightly better than FeMn, and significantly worse than NiMn and CoNiO. We were also able to successfully fabricate NiFe based spin-valves pinned with IrMn and they show good magnetic properties. Our results show than IrMn is a good alternative to FeMn. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1166-1168 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of (100)CdTe epilayers by organometallic vapor phase epitaxy (OMVPE) has been investigated using a vertical downward flowing impinging jet reactor with dimethylcadmium (DMCd) and diethyltelluride (DETe) as the organometallic sources. An Arrhenius plot of deposition rate versus substrate temperature had a linear region over a wide temperature range from 320 to 480 °C, corresponding to an activation energy for growth of 18 kcal/mol. Surfaces of (100)CdTe epilayers had high densities of pyramidal hillocks. Double-crystal x-ray rocking curves, however, were not affected by the presence of the hillocks. Full widths at half maximum for the (400) reflection of less than 30 arcsec were obtained for growth temperatures from 400 to 480 °C. At 460 °C rocking curves for the epilayer were nearly identical to the substrate demonstrating that films whose quality matches that of the underlying substrate can be deposited in the impinging jet system.
    Type of Medium: Electronic Resource
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