ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The results of theoretical and experimental investigations of the appearance of negative differential resistance in p-n junction diode structures in the presence of a high level of microwave power are presented. The theoretical analysis of the influence of a high level of microwave power on the form of the current-voltage characteristic of a diode takes into account the variation of the constant component of the current flowing through the p-n structure due to the heating of the free charge carriers and the rectifier effect.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187600
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