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  • 1
    Electronic Resource
    Electronic Resource
    Electromigration in Al(Cu) two-level structures: Effect of Cu and kinetics of damage formation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 969-978 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration characteristics and kinetics of damage formation for Al(Cu,Si) line segments on a continuous W line and Al(Cu)/W two-level interconnect structures have been investigated. The mass transport as a function of temperature was measured using a drift-velocity technique. The flux divergence at the line/stud contact was found to be responsible for formation of open failure in the interconnect structure, as shown by a direct correlation observed between mass depletion at the contact and resistance increase of the line/stud chain. The depletion of Al at the stud contact is preceded by an incubation period during which Cu is swept out a threshold distance from the cathode of the line. This leads to a damage formation process which is controlled by both Cu electromigration along grain boundaries and dissolution of the Al2Cu precipitates. This is distinctly different from single-level interconnects measured using a conventional electromigration test site. Measurements of the mean failure lifetime in the two-level interconnect yield an activation energy of 0.58 eV for Al, in contrast to 0.78 and 0.83 eV for Al(0.5 wt % Cu) and Al(2 wt % Cu), respectively. The activation energies of the electromigration drift velocity were found to be 0.86 and 0.68 eV for Cu and Al in Al(2 wt % Cu, 3 wt % Si), respectively. These results enable one to infer that the kinetic process is controlled by electromigration of Cu along grain boundaries instead of by dissolution of the Al2Cu precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354839
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  • 2
    Electronic Resource
    Electronic Resource
    Electromigration in two-level interconnect structures with Al alloy lines and W studs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 291-293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that electromigration testing needs to be performed in structures that reflect use conditions, such as when there is a flux divergence as provided by the W stud-Al(Cu) interface rather than in a simple planar structure. The Al(Cu)/W interface has been investigated using both drift velocity and resistometric techniques with pure Al, Al(0.5 wt. % Cu) and Al(2 wt. % Cu) lines on W studs for interlevel connections. It is shown that the mass depletion can be correlated to the resistance change and electromigration failure in line/stud chains. A new effect is demonstrated in that a critical length of Al has to be depleted on Cu before the Al can migrate; when such migration starts the Al catches up with the Cu rich region, leading to slower motion and the production of extrusions which will also cause failures by shorting to adjacent lines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352335
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  • 3
    Electronic Resource
    Electronic Resource
    Electromigration failure due to interfacial diffusion in fine Al alloy lines (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1023-1025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage formation at grain boundary junctions has long been recognized as the dominant electromigration failure mechanism in metal lines. We report the results of drift-velocity experiments on fine lines with no reservoirs and find that the interfacial mass transport, along the edges of the lines, is faster than that along grain boundaries. This causes mass depletion at the cathode end of the line, leading to electromigration failure. The result demonstrates a new failure mechanism due to electromigration in submicron lines with bamboo grain structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108513
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  • 4
    Electronic Resource
    Electronic Resource
    Selection of solutes for improving electromigration resistance of metals: A new insight (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3235-3237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There has long been as much art as science for choosing solute elements to improve the resistance to electromigration of metals such as aluminum. Alloying additions have been selected with the intention of maximizing the degree of segregation to the grain boundaries, exploiting differences in atom size to limit the grain-boundary excess volume, and forming grain-boundary precipitates which potentially can act as reservoirs of solute or as internal diffusion barriers. We show, using published data concerning the performance of a number of Al alloys measured under similar conditions, that the above strategies do not provide a direct correlation with lifetime. A further necessary condition for an addition which forms a precipitate in a eutectic system is its ability to dissolve into the grain boundary to replenish material driven away by electromigration. In peritectic systems, significant supersaturation can exist in the grains, and the grain boundaries. Equilibration of such systems decreases their effectiveness. In such systems, grains rather than precipitates can act as reservoirs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106704
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  • 5
    Electronic Resource
    Electronic Resource
    Crystal growth and materials edited by E. Kaldis and H. J. Scheel (1978)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 11 (1978), S. 673-674 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889878014247
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    Paper (German National Licenses)
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