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  • 1
    Electronic Resource
    Electronic Resource
    Electrical activation of boron-implanted silicon during rapid thermal annealing (1988)
    Springer
    Applied physics 47 (1988), S. 359-366 
    Details
    ISSN: 1432-0630
    Keywords: 61.70-r ; 61.70.At ; 61.70.Sk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical activation of boron implanted in crystalline and preamorphized silicon has been investigated during rapid thermal annealing performed with halogen lamps. Samples implanted with B+ fluences ranging between 5×1014 and 1×1016cm−2 and treated at temperatures between 900°C and 1100°C have been examined. When boron is implanted in crystalline Si, activation proceeds slowly atT〈1000°C and cannot be completed in times typical of rapid thermal annealing (a few tens of seconds). The analysis of carrier profiles indicates that the time constant for activation is strongly affected by local damage and dopant concentration. If the total boron concentration exceeds equilibrium solubility, precipitation occurs concomitant to activation, even if the substitutional boron fraction is still lower than equilibrium solubility. ForT≧1000°C complete activation is obtained in times of about 10 s. In the case of preamorphized Si the activation occurs very quickly, during the recrystallization of the amorphous layer, for all the examined temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615499
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of nucleation on the kinetics of boron precipitation in silicon (1987)
    Springer
    Applied physics 44 (1987), S. 135-141 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Sk ; 64.75.+g
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A study of the precipitation of boron implanted into pre-amorphized silicon has been carried out following several thermal processes in the temperature range between 550 and 900 °C. It will be shown that the formation of inactive boron takes place even during a low-temperature solid-phase epitaxy of the regrowing layer, when the starting concentration level exceeds about 3.5×1020 atoms/cm3. The presence, at the beginning of the annealing process, of inactive atoms in the form of small aggregates which behave as nucleation centers, markedly affects the precipitation kinetics during the thermal treatments. In these conditions the experimental data follow the Ham's theory of precipitation. On the contrary, if all the dopant is incorporated in the lattice side, nucleation is the limiting factor for boron deactivation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626414
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  • 3
    Electronic Resource
    Electronic Resource
    A novel Pd-SiN"xO"y hydrogen sensor of high stability and sensitivity
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 5 (1991), S. 181-183 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(91)80242-C
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  • 4
    Electronic Resource
    Electronic Resource
    Interaction between point defects and dislocation loops as the phenomenon able to reduce anomalous diffusion of phosphorus implanted in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 98-104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus was implanted at doses below amorphization threshold in virgin silicon and in silicon containing interstitial dislocation loops. The loops were formed by high-dose Si+ implantation and 900 °C, 30 min annealing. Triple-crystal x-ray diffraction and junction depth measurements combined with secondary ion mass spectrometry were used for the analysis of implant defects and the determination of P distribution, respectively. Annealings were carried out in furnace in the range between 600 and 900 °C, and by electron beam at 1000 °C for 10 s. The results obtained show that the presence of loops strongly reduces the phosphorus anomalous diffusion. This phenomenon is the consequence of the absorption by the loops of the interstitial excess coming from dissolution of the clusters produced by the P implant. The influence of the loop position with respect to the P distribution on the extent of P diffusivity is analyzed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343382
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  • 5
    Electronic Resource
    Electronic Resource
    Clustering equilibrium and deactivation kinetics in arsenic doped silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 101-107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equilibrium between clusters and dopant in solution was studied on silicon on insulator specimens uniformly doped with As at concentrations CAs from 1 to 7.6×1020 cm−3. The values of the carrier density n* after equilibration at 700, 800, and 900 °C are reported. With increasing dopant concentration n* rapidly saturates to the limiting value of the carrier density ne, thus simulating a precipitation process. It is shown that the values of n* at different temperatures and dopant concentrations can be calculated by an equation derived in the Appendix by using a simple cluster model. The deactivation was analyzed by isothermal annealing of the specimens at temperatures in the range 550–800 °C. At high temperature the kinetics accurately complies with the rate equation −dn/dt=A{exp[−(E−αn)/kT]−(n0−n)/(n0−n*)exp[−(E−αn*)/kT]} which is the one reported in [D. Nobili, S. Solmi, M. Merli, and J. Shao, J. Electrochem. Soc. 146, 4246 (1999)] complemented by the second term on the right to account for the declustering process. Deviations leading to rates lower than predicted by the above equation are presented by the most heavily doped compositions after partial deactivation at temperatures ≤ 700 °C. The analysis of this phenomenon puts into evidence that clustering presents a limiting rate which only depends on temperature and carrier density, and is insensitive to As concentration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377607
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  • 6
    Electronic Resource
    Electronic Resource
    Codiffusion of arsenic and boron implanted in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2400-2406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The codiffusion of As and B implanted in Si at high doses (1×1016 cm−2) and with energies corresponding to the same projected range has been investigated at 900 and 1000 °C on the basis of dopant and carrier profile measurements. The comparison of the codiffusion data with the corresponding ones obtained by the diffusion of each element alone revealed some anomalous effects which can be explained by assuming the formation of neutral donor–acceptor pairs. These complexes are mobile with a diffusion coefficient Dpair=17 exp(−4/kT) cm2/s, very close to the diffusion coefficient of As in intrinsic Si. Electrons are the majority carriers in the region where both dopants are present at high densities. On the basis of these features, a diffusion model that takes pairing into account is presented. A simulation program including this model allows one to foresee the anomalous phenomena occurring in the high-concentration codiffusion of donors and acceptors in Si and in general shows a good agreement with experimental profiles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358765
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  • 7
    Electronic Resource
    Electronic Resource
    High concentration diffusivity and clustering of arsenic and phosphorus in silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2484-2490 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The As diffusion coefficient as a function of its concentration was determined by Boltzmann–Matano analysis of the profiles of the dopant diffusing out of its conjugate phase precipitates during furnace annealing at 900 and 1050 °C of samples heavily doped by ion implantation. This method allowed to assure a constant diffusion source of As and to investigate a doping range attaining 3×1021 cm−3. Along the same lines, the diffusivity versus concentration of specimens heavily implanted with P was determined at 900 and 1000 °C. Dopant profiles were determined by secondary neutral mass spectroscopy. The diffusivity of both As and P increases with dopant content, attaining a maximum at a concentration which closely corresponds to the saturation value of the carrier density, ne, which we previously determined by equilibration annealing of specimens with excess dopant. This finding demonstrates that ne represents the limiting value of the concentration of unclustered dopant at the diffusion temperature. On the contrary, a diffusivity monotonically increasing with dopant concentration up to its solubility limit, was observed in the case of B and Sb, which do not cluster. Finally, we report the results of a simulation model which can accurately describe the evolution of the As profile upon annealing, by using our diffusivity data and taking into account both the precipitation and clustering phenomena. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367008
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  • 8
    Electronic Resource
    Electronic Resource
    High-temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended x-ray absorption fine structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9037-9042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local atomic environment of the Sb dopant in 2 and 5×1016 ions/cm2 implanted Si samples has been studied by near grazing incidence fluorescence extended x-ray absorption fine structure at different stages of the Sb deactivation process. The annealings were performed at high temperature (900–1000 °C) during various periods: 30 s–4 h. The Sb out-diffusion and the high percentage of Sb precipitates are put into evidence especially for Sb-only implanted samples. The comparison of the Sb and B codiffusion data with the corresponding ones obtained by the diffusion of Sb alone revealed several anomalous effects due to dopant interaction. Moreover, a simulation program including dopant precipitation and donor–acceptor pairing allows us to foresee most of the anomalous phenomena occurring in high-concentration codiffusion experiments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362636
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  • 9
    Electronic Resource
    Electronic Resource
    Codiffusion of arsenic and phosphorus implanted in silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5005-5012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The codiffusion of arsenic and phosphorus implanted in silicon has been investigated after annealing at 900 and 1000 °C for different concentrations of the dopants. Analysis of the profiles was performed using secondary-ion-mass spectroscopy, junction staining, and incremental resistivity and Hall measurements. The results do not evidence any direct interaction between the dopants. All the observed anomalous effects of the codiffusion, compared with the diffusion of the single elements by themselves, seem to be justifiable on the basis of the interactions between the dopants and the defects produced by ion implantation. In addition, it has been observed that the presence of a high concentration of As atoms makes the annealing of the implantation damage faster and strongly reduces the P transient-enhanced diffusion. This effect favors the fabrication of graded shallow junctions with a high-surface-carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354306
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  • 10
    Electronic Resource
    Electronic Resource
    Boron ion implantation through Mo and Mo silicide layers for shallow junction formation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3962-3967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum silicide is investigated because of its possible application in a self-aligned process for ultra large scale integration technology. p+/n shallow junctions are fabricated by boron implantation through Mo films or MoSi2 layers and rapid thermal annealing. Both procedures enable us to obtain junctions as shallow as 130 nm with very good electrical characteristics (reverse current density 1 nA/cm2 at −1 V, ideality factor 1.05 and contact resistivity 1×10−6 Ω cm2). The influence of a surface preamorphization with different thicknesses on junction depth and electrical characteristics is reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348457
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