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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 6-7 (Jan. 1989), p. 243-250 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Insectes sociaux 26 (1979), S. 123-135 
    ISSN: 1420-9098
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Description / Table of Contents: Summary Raiding behaviour ofHarpagoxenus sublaevis could be observed in arena experiments in the laboratory. Recording the activity ofHarpagoxenus-and ♀♀ over several weeks showed that scouting of theHarpagoxenus and foraging of the host species mainly occurs during daytime. Raids began between 10oo a.m. and 3oo p.m. Nestmates are recruited to the raided nest by tandem running. Reaching theLeptothorax-nest the ♀♀ can either remain there and begin to attack theLeptothorax, or return to their home nest to recruit additional workers. First the raided nest is besieged by the ♀♀, which stay just at the entrance of the nest and attack allLeptothorax when leaving it. Only after most of theLeptothorax outdoor workers have been killed, theHarpagoxenus enter the nest, expel the remainingLeptothorax and carry pupae and perhaps larvae to their home nest. The number of old workers, callows and pupae ofHarpagoxenus andLeptothorax was counted inHarpagoxenus colonies collected in the field near the end of the raiding season. TheHarpagoxenus colonies had multiplied the number of their slaves by raiding while comparableLeptothorax colonies produce not more workers than one half of the number of old workers present in the colonies.
    Notes: Zusammenfassung Das Raubzugverhalten vonHarpagoxenus sublaevis wurde in Arenaversuchen im Labor beobachtet. Die Protokollierung der Aktivität vonHarpagoxenus- und ♀♀ Über mehrere Wochen ergab, daß das Scouten derHarpagoxenus und Fouragieren der Wirtsarten überwiegend am Tag geschieht. Der Beginn der Raubzüge lag zwischen 10oo und 15oo Uhr. Die Rekrutierung von Nestgenossen zum Raubzug erfolgt mittels tandem running. Zum Beutenest geführte ♀♀ können dort bleiben und mit dem Angriff auf dieLeptothorax beginnen oder zum Mutternest zurückkehren, um zusätzliche Arbeiterinnen zu rekrutieren. Zunächst wird dasLeptothorax-Nest von den ♀♀ belagert, indem sie sich unmittelbar vor seinem Eingang aufhalten und jedeLeptothorax angreifen, die das Nest verläßt. Erst wenn die meisten Außendiensttiere derLeptothorax getötet sind, dringen dieHarpagoxenus in das Nest ein, vertreiben noch verbliebeneLeptothorax und tragen Puppen und evtl. Larven daraus in ihr Mutternest. InHarpagoxenus-Kolonien, die gegen Ende der Raubzugsaison im Freiland gesammelt worden waren, wurde die Anzahl der alten Arbeiterinnen, frisch geschlüpften Tiere und Puppen vonHarpagoxenus undLeptothorax festgestellt. DieHarpagoxenus-Kolonien hatten die Zahl ihrer Sklaven durch Raubzüge vervielfacht, während vergleichbareLeptothorax-Kolonien nicht mehr Arbeiterinnen aufziehen als etwa die Hälfte der in den Nestern vorhandenen alten Arbeiterinnen.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 19-20 (Jan. 1991), p. 455-460 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 41 (1985), S. 223-227 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: With a triple-crystal diffractometer of parallel (n, -n, n) setting, X-ray diffuse scattering has been observed from a silicon crystal containing process-induced defects. It is shown that the use of a conventional X-ray tube with 1.5 kW power guarantees the registration of defects with characteristic size R ∼ 1.8 μm and concentration C0 ∼ 1 × 109 cm-3. The theoretical simulations of the diffuse scattering were carried out based on the Huang theory. The data of TEM investigations show stacking faults of interstitial type with radius RL ∼ 0.9 μm and concentration CL 2 × 109cm-3, as well as small precipitates, in the specimen.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 98-104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus was implanted at doses below amorphization threshold in virgin silicon and in silicon containing interstitial dislocation loops. The loops were formed by high-dose Si+ implantation and 900 °C, 30 min annealing. Triple-crystal x-ray diffraction and junction depth measurements combined with secondary ion mass spectrometry were used for the analysis of implant defects and the determination of P distribution, respectively. Annealings were carried out in furnace in the range between 600 and 900 °C, and by electron beam at 1000 °C for 10 s. The results obtained show that the presence of loops strongly reduces the phosphorus anomalous diffusion. This phenomenon is the consequence of the absorption by the loops of the interstitial excess coming from dissolution of the clusters produced by the P implant. The influence of the loop position with respect to the P distribution on the extent of P diffusivity is analyzed and discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 907-910 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a series of x-ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E〈50 keV using sealed tube sources. To analyze the origin of the enhanced reflectivity of this material compared to perfect, FZ-grown silicon, double and triple crystal diffractometer measurements were carried out. The results are discussed with regard to the application of ACS for monochromatization of synchrotron radiation in the mentioned energy range.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1834-1840 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the lattice defects induced by silicon-ion implantation on the B, P, As, and Sb diffusivities is investigated after annealing between 700 and 900 °C. The nature and depth position of the residual implantation defects in undoped samples is determined by the analysis of the rocking curves obtained by triple-crystal x-ray diffraction and transmission electron microscopy. In particular, besides the interstitial dislocation loops and clusters below the original amorphous-crystal interface, the epitaxial regrowth of the amorphized silicon leaves a vacancy-rich surface layer and a deeper region enriched in interstitials. These regions correspond to those where Monte Carlo simulations of defect production foresee excess point defects. Accordingly, as the dopant is located in correspondence with the vacancy or interstitial clusters, different behaviors of anomalous diffusion are observed. In the deep region where an interstitial excess is present, B and P show marked enhanced diffusion, while only a small enhancement is exhibited by As and Sb. On the contrary, retarded diffusivity for B and light enhancement for As and Sb are observed in the surface layer. These different trends are consistent with the different accepted contributions of vacancies and interstitials to the diffusion mechanisms of the investigated dopants.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 19 (1996), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: We present the first experimental results on salinity tolerance and regulation mechanisms in the genus Tolypella. The two species investigated, T. nidifica and T. glomerata, regulate turgor pressure with almost complete effectiveness by adjustment of K+ and CT concentrations. Sucrose is also involved. The mechanism is basically identical to the mechanism of turgor pressure regulation previously identified in representatives of the genera Chara and Lamprothamnium. Since Chara and Lamprothamnium on the one hand and Tolypella on the other belong to different phylogenetic branches that separated early in the geological history of the Characeae, the K+ regulation mechanism can be assumed to represent an ancient pattern derived from a salt-tolerant common ancestor. Furthermore, our experiments provide evidence that salinity is a limiting factor for fertility in both T. nidifica and T. glomerata. Although the onset of gametangia covers the whole range of salinities tested here (0–29 psu), 12psu was the inhibitory level for the formation of mature oospores. Fertilization is probably disturbed by an increase in salinity. An inability to reproduce sexually under euryhaline conditions could explain why the distribution of the two species is restricted to oligo- and mesohaline environments, despite the wide range of salinity tolerance of their vegetative apparatus.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 13 (1990), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract. Chara vulgaris L. growing in an oligohaline lake was adapted to laboratory conditions and subjected to long-term salinity treatments ranging from 0 to 350 mol m 3 NaCl added to the lake water (40–680 mosmol kg 1). Osmotic potential and concentration of the main osmotically active solutes (K+, Na+, Mg2+, Cl and sucrose) in the vacuolar sap of the central internodal cells were estimated. C. vulgaris did regulate turgor but incompletely. Turgor decreased from 335 mosmol kg 1 under control conditions to 52–111 mosmol kg 1 at 350 mol m 3 NaCl. The enhancement of πi was achieved by increase in both ions and sucrose. Sterile and fertile plants differed in their response to osmotic stress. In sterile plants, the ions accounted for about 87% of the vacuolar osmotic potential. The increase of πi under osmotic stress was exclusively due to an accumulation of Na+ and Cl-. In fertile plants, sucrose accounted for about 35% of πi and ions for about 51% Under osmotic stress, sucrose content increased together with the ionic content of Na+ and Cl-.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0047-6374
    Keywords: Aging ; Flow cytometry ; Fluorescence ; Low density lipoproteins ; Lymphocyte
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
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