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  • 1
    Electronic Resource
    Electronic Resource
    Tunneling-like magnetoresistance in bicrystal La0.8Sr0.2MnO3−δ thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2506-2508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferromagnetic La0.8Sr0.2MnO3−δ films have been sputtered on SrTiO3 bicrystal substrates. Etched patterns crossing the bicrystal grain boundary are compared with identical patterns not crossing it. The films were annealed at different conditions and their magnetoresistance measured as a function of temperature T and of in plane magnetic field H strength and direction. Annealing at 900 °C was found to modify the grain boundary and to increase its magnetoresistance. For H=±80 Oe parallel to the grain boundary and T=32 K narrow magnetoresistance peaks of 60% height are measured. They are interpreted in the frame of an in plane magnetotunneling structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122497
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  • 2
    Electronic Resource
    Electronic Resource
    Structural, optical, and electronic properties of magnetron-sputtered platinum oxide films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7672-7675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stable platinum oxide films have been prepared through magnetron sputtering and have been analyzed on the bases of energy-sensitive microanalyses, x-ray diffraction, resistivity, and optical reflectance measurements. The complex dielectric function has been determined for various oxygen contents in the film covering the wave-number regime 50 cm−1–λ−1–50 000 cm−1. The vibrational properties are dominated through a strong band, centered at 765 cm−1, associated with a asymmetric stretching mode of the Pt—O bond. The films are amorphous, with chemical composition PtOx, where 1〈x〈2.1, and are considered as a homogeneous solid solution of PtO and PtO2. The materials system displays a conductor–insulator transition at x≥2, in connection with an optical band gap Eg of ∼1.2 eV in the fully oxidized state. The conduction mechanism over the whole range of compositions is thermally activated and is determined through a large density of localized states extending into the band gap. At x〈2 the optical gap disappears, consistent with the semimetallic behavior of the materials system for this range of composition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362341
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  • 3
    Electronic Resource
    Electronic Resource
    Excess noise, structural properties, and their effects on bolometric performance of thin superconducting films on silicon membranes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4580-4583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current induced excess noise, in connection with bolometric performance of thin superconducting GdBa2Cu3O7−x films on silicon membranes, has been investigated as a function of temperature within the transition regime for the first time. The data reveal a strong correlation between structural film properties and the individual noise pattern that clearly indicates three separated coexisting superconducting phases in the film, with transition temperatures of 84.5, 86, and 88.5 K. The latter accounts for the current carrying properties, while the former two have a limiting effect on the sensitivity of the device. Inhomogeneous film growth accounts for high resistance fluctuation noise (flicker noise) at very low frequency. Also, a drastically increased sensitivity against electromagnetic background interference has been observed, in conjunction with nonlinear properties of the device, and at isolated frequencies. The increase in the concentration of microcracks in the film generated upon thermomechanical stress, and through aging, accounts for a drastic increase in the overall noise magnitude and a rapidly degrading bolometric performance, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359422
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of a 36.8° grain boundary on the magnetoresistance of La0.8Sr0.2MnO3−δ single crystal films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 968-970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferromagnetic manganite films have been sputtered on bicrystal substrates. Their magnetoresistance was measured as a function of magnetic field and temperature. The grain boundary magnetoresistance at low temperature is separated from the intrinsic magnetoresistance near the Curie temperature. The grain boundary magnetoresistance peaks at about 100 Oe and saturates at about 2 kOe. For a La0.8Sr0.2MnO3 film with a grain boundary angle θ=36.8° a field independent component r0=4.1×10−6 Ω cm2 was separated from a field-dependent component which has its maximum rH=2.3×10−6 Ω cm2 for H of order the coercive field. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119702
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of ultrarough silver films on silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1058-1062 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of inhomogeneously grown rough silver films have been analyzed on the basis of reflectance measurements. Data have been recorded within the wave number range 50 cm−1〈λ−1〈50 000 cm−1. The results are compared with compact and fairly smooth films, made from the same metal. Rough films reveal very low reflectance and high absorptivity values of nearly 1, at wave numbers (approximately-greater-than)200 cm−1. The reflectance of these films is peaking at the bulk plasma resonance hvp of silver at 3.87 eV. Smooth compact films, in contrast, show a pronounced minimum at the same energy. Based on an effective medium approach and available literature data, the dielectric function (DF) and absorption coefficient have been calculated. For rough films, the real part of the DF remains positive within the whole spectral range, but is negative for compact films below hvp, in agreement with published data. The calculated DF of the inhomogeneously grown films fully resembles the experimental observations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362841
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication and properties of intrinsic Josephson junctions in thin films of Tl-Ba-Ca-Cu-O (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3396-3400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed intrinsic Josephson effects for current flow perpendicular to the CuO2 planes in HTSC thin films. Tl-Ba-Ca-Cu-O thin films were deposited on step edges in LaAlO3 substrates. Due to the special preparation process, microbridges across such steps act as stacks of intrinsic Josephson junctions with current flow perpendicular to the CuO2 planes (STEP STACK junctions). Up to 130 individual junctions could be observed exhibiting high IcRN products up to 26 mV per junction. We observed ac-Josephson effects as Shapiro steps and in microwave emission experiments. At low temperatures sharp emission peaks were detected at frequencies of 11.3 and 24.2 GHz. Broad emission peaks from the whole stack were observed at temperatures close to Tc. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363205
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  • 7
    Electronic Resource
    Electronic Resource
    Extended function of a high-Tc transition edge bolometer on a micromachined Si membrane (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1917-1919 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bolometric performance of a high-Tc transition edge bolometer has been evaluated within the temperature range 80 K〈T〈300 K. The detectivity D* of the device is peaking at transition midpoint and remains at moderate levels up to room temperature. The bolometric time constant of the device increases from 0.33 ms at transition midpoint to 1.55 ms at ambient temperature. The noise pattern displays 1/f behavior at low frequency and is scaling with bias current and the thermal resistance coefficient β of the superconducting film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114567
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  • 8
    Electronic Resource
    Electronic Resource
    Sensitive high-Tc transition edge bolometer on a micromachined silicon membrane (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2421-2423 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting transition edge bolometers on micromachined silicon membranes have been fabricated. The optical response is 580 V/W at a time constant of 0.4 ms. The detectivity D* is 3.8×109 (cm Hz1/2 W−1) at a temperature of 84.5 K and within the frequency regime 100〈f〈300 Hz. This is one of the fastest composite type bolometers ever reported. Upon thermal optimization, this type of detector should be competitive with state-of-the-art quantum detectors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113960
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  • 9
    Electronic Resource
    Electronic Resource
    Direct patterning of gold oxide thin films by focused ion-beam irradiation (2000)
    Springer
    Applied physics 71 (2000), S. 331-335 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 52.50.Jm; 61.80.Jh; 85.40.Ls
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. For direct writing of electrically conducting connections and areas into insulating gold oxide thin films a scanning Ar+ laser beam and a 30 keV Ga+ focused ion beam (FIB) have been used. The gold oxide films are prepared by magnetron sputtering under argon/oxygen plasma. The patterning of larger areas (dimension 10–100 μm) has been carried out with the laser beam by local heating of the selected area above the decomposition temperature of AuOx (130–150 °C). For smaller dimensions (100 nm to 10 μm) the FIB irradiation could be used. With both complementary methods a reduction of the sheet resistance by 6–7 orders of magnitude has been achieved in the irradiated regions (e.g. with FIB irradiation from 1.5×107 Ω/□ to approximately 6 Ω/□). The energy-dispersive X-ray analysis (EDX) show a considerably reduced oxygen content in the irradiated areas, and scanning electron microscopy (SEM), as well as atomic force microscopy (AFM) investigations, indicate that the FIB patterning in the low-dose region (1014 Ga+/cm2) is combined with a volume reduction, which is caused by oxygen escape rather than by sputtering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000598
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