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  • 1
    Electronic Resource
    Electronic Resource
    The nonproportionality of interface-trap generation to hole trapping efficiency in metal-oxide-silicon devices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1844-1846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The susceptibility to hole trapping of the gate oxide of a metal-oxide-silicon (MOS) device is not necessarily proportional to the efficiency of interface trap generation at the Si-SiO2 interface, which is widely believed due to the recombination of electrons and trapped holes in the oxide close to the interface. In this study, an oxide given a high-temperature (1000 °C) anneal, which increases the hole trapping efficiency of the oxide, is shown to have much less generated interface traps compared to a normal oxide (without high-temperature annealing) upon exposing to ionizing radiation with subsequent electron injection, or high-field injection alone. Under high-field tunneling injection, the electron fluence required to create a certain density of interface trap is an order of magnitude higher for the annealed oxide compared to the normal oxide. These results could provide a possible direction for improving the reliability of the gate oxide of a MOS field-effect transistor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349502
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  • 2
    Electronic Resource
    Electronic Resource
    Traveling wave method for measurement of thermal conductivity of thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4180-4183 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present here the design of a novel and simple setup for measuring the thermal conductivity of thin films. This method is based on the well known principle of phase lag of a traveling thermal wave. In the present setup, the traveling thermal wave is generated in the thin film by irradiating its one edge by an infrared laser. The phase lag (Δθ) between the excitation wave and the resulting thermal wave, at a variable distance d from the edge of the sample, is determined by measuring the deflection of another "probe-laser." The thermal diffusivity is then directly calculated from the slope of the plot between Δθ and d. This method offers an accuracy of better than ±5%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148364
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  • 3
    Electronic Resource
    Electronic Resource
    Optical and structural properties of epitaxial MgxZn1−xO alloys (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3327-3329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical and structural properties of high-quality single-crystal epitaxial MgZnO films deposited by pulsed-laser deposition were studied. In films with up to ∼36 at. % Mg incorporation, we have observed intense ultraviolet band edge photoluminescence at room temperature and 77 K. The highly efficient photoluminescence is indicative of the excitonic nature of the material. Transmission spectroscopy was used to show that the excitonic structure of the alloys was clearly visible at room temperature. High-resolution transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectroscopy/ion channeling were used to verify the epitaxial single-crystal quality of the films and characterize the defect content. Post-deposition annealing in oxygen was found to reduce the number of defects and to improve the optical properties of the films. These results indicate that MgZnO alloys have potential applications in a variety of optoelectronic devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125340
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electrical and photoluminescence (PL) properties of a Si delta-doped GaN layer grown by metalorganic chemical vapor deposition. The Hall mobility and electron sheet concentration are 726 cm2/V s and 1.9×1012 cm−2, respectively, at 2 K. A PL peak located at 78 meV below the band gap of GaN is observed at 77 K. This PL peak is attributed to the radiative recombination between electrons in the two-dimensional quantum states and photoexcited holes in GaN, which is consistent with simulation results using a one-dimensional Poisson and Schrödinger equation solver. The peak disappears at temperatures higher than 77 K and is not observed in uniformly doped GaN layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353836
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  • 5
    Electronic Resource
    Electronic Resource
    Refractive indices and absorption coefficients of MgxZn1−xO alloys (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 979-981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indices of refraction for MgxZn1−xO epitaxial films grown by pulsed-laser deposition on sapphire substrates with x up to 0.36 were determined in the range of wavelength 457–968 nm by analysis of optical transmission spectra and prism-coupled waveguide measurements. The dispersion follows the first-order Sellmeier dispersion equation. Absorption coefficients, exciton energy gaps, and binding energies of MgxZn1−xO alloys were determined by transmission spectroscopy. The excitonic absorption features were clearly visible at room temperature despite alloy broadening. These results provide important information for the design and modeling of ZnO/MgZnO heterostructure optoelectronic devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125912
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  • 6
    Electronic Resource
    Electronic Resource
    Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 43-45 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alternating layers of Ge quantum dots embedded in either Al2O3 or AlN matrices were deposited on sapphire substrates by pulsed-laser deposition. The characteristics of the dots are shown to be independent of the surrounding matrix. The dots size (73, 130, 160, and 260 ű5%) was controlled by the laser energy density and deposition time, and was characterized by high-resolution transmission electron microscopy. The dots were single crystalline with no apparent GeOx interfacial layers. Transmission spectroscopy at room temperature and 77 K was used to probe the above-band-edge absorption of the Ge nanodots. The spectral positions of both E1/E1+Δ1 and E2 transitions were found to shift to higher energy in the absorption spectra with decreasing nanodot sizes. This indicates that strong quantum-confinement effect permits the optical properties of Ge dots to be modified in a controlled manner. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125650
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  • 7
    Electronic Resource
    Electronic Resource
    Partial oxidation of methane over phosphate (1987)
    Springer
    Reaction kinetics and catalysis letters 34 (1987), S. 295-301 
    Details
    ISSN: 1588-2837
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Abstract Парциальное окисление метана на промотированном и непромотированном фосфатном катализаторе железа исследовали в интервале температур 873–953 К и в проточном реакторе. Поверхностная и блочная структура катализатора исследована с помощью рентгено-дифракционной и ИК-спектроскопий. Проверяли влияние модифицирования фосфатом лантана на частичное окисление метана.
    Notes: Abstract Partial oxidation of methane over unpromoted and promoted iron phosphate catalysts was investigated in the temperature range of 873–953 K in a flow reactor. Using XRD and IR techniques, the bulk and surface structure of the given catalysts have been studied. The modification functions of lanthanum phosphate for partial oxidation of methane were also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02068020
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