Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 2776-2778
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have performed the first scanning tunneling microscopy (STM) study of gallium adsorption on both the Si-terminated 6H-SiC(0001) ((square root of 3)×(square root of 3)) and C-terminated 6H-SiC(0001¯) (2(square root of 3)×2(square root of 3)) surfaces. The structure of the Ga terminated 6H-SiC surface showed strong polarity dependence. On the Si-terminated (square root of 3)×(square root of 3) surface, parallel rows of Ga atoms arranged in three different domains oriented at 120° with respect to each other at 1 ML coverage were observed. On the C-terminated 2(square root of 3)×2(square root of 3) surface, sets of two concentric rings formed an overall 4(square root of 3)×4(square root of 3) reconstruction at 1 ML coverage. We propose a structural model for the 4(square root of 3)×4(square root of 3) structure which explains the STM image. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120130
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