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  • 1
    Electronic Resource
    Electronic Resource
    Cathodoluminescence and photoluminescence from chemical-vapor-deposited diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1758-1761 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence spectra from microwave-plasma-assisted chemical-vapor-deposited (CVD) diamond have been studied as a function of temperature at low electron energies. This investigation shows a pronounced difference between the luminescence spectra from CVD diamond films as grown and CVD diamond films annealed by rapid thermal processing at 1000 °C for one minute in an argon atmosphere. The relative intensities of the dominant features at 443 nm (2.8 eV) and 510 nm (2.4 eV) are very different for unannealed and annealed samples. We report measurements of the temperature dependence of these luminescence bands. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358870
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of nucleation and growth processes of diamond films by atomic force microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4099-4106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (i) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (ii) the silicon substrate-diamond film interface side of diamond films (1–4 μm thick) removed from the original surface of the substrate, and (iii) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358496
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 220-222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the application of pump-probe second harmonic generation (SHG) to monitor spin dynamics in nonmagnetic semiconductor heterostructures. Spin-polarized electrons were selectively excited by a pump beam in the GaAs layer of GaAs/GaSb/InAs structures. However, the induced magnetization manifests itself through the SHG probe signal from the GaSb/InAs interface, thus indicating a spin-polarized electron transport. We find that the magnetization dynamics is governed by an interplay between the spin density evolution at the interfaces and the spin relaxation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494107
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  • 4
    Electronic Resource
    Electronic Resource
    Size evolution of low energy electron generated Ca colloids in CaF2 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 320-322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal colloids in CaF2 created by low energy electron irradiation are identified by their optical absorption bands. A mean colloid radius of 18 nm is deduced from a narrow colloid band found in crystals irradiated at room temperature. Absorption data reveal a strong influence of crystal temperature during irradiation on metallization efficiency, mean colloid size, and colloid size distribution. A reversible absorption band shift is observed when turning the electron beam on and off, which may indicate a decrease of colloid size during electron irradiation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113531
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  • 5
    Electronic Resource
    Electronic Resource
    Optical glow spectra arising from low-energy N2, N+2 and electron bombardment of MgF2 surfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1954-1956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon emission spectra resulting from the impact of N2, N+2, and electron beams on magnesium fluoride in an ultrahigh vacuum environment were measured and compared for beam energies in the range of 200–2000 eV. Unexpectedly, only the ion- and electron-induced spectra exhibited broad fluorescence. The observed data suggest that the broad fluorescence arising from low-energy ion bombardment is due primarily to the transfer of electronic energy to the surface by resonance or Auger neutralization. Since molecular nitrogen is a major constituent of the atmosphere at orbital altitudes, these measurements bear directly on radiation-induced glow and erosion processes on surfaces of spacecraft in low-earth orbit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106147
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  • 6
    Electronic Resource
    Electronic Resource
    Carrier relaxation time divergence in single and double layer cuprates (2003)
    Springer
    The European physical journal 36 (2003), S. 327-334 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We report the transient optical pump-probe reflectivity measurements on single and double layer cuprate single crystals and thin films of ten different stoichiometries. We find that with sufficiently low fluence the relaxation time ( $\tau_{R})$ of all samples exhibits a power law divergence with temperature $(T): \tau_{R} \propto T^{-3 \pm 0.5}$ . Further, the divergence has an onset temperature above the superconducting transition temperature for all superconducting samples. Possible causes of this divergence are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e2003-00351-8
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  • 7
    Electronic Resource
    Electronic Resource
    Time-of-flight investigation of the intensity dependence of laser-desorbed positive ions from SrF2 (1994)
    Springer
    Applied physics 58 (1994), S. 563-571 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Ba ; 79.20.Ds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The intensity dependence of the total and specific yields of positive ions desorbed from SrF2 under 193 nm and 308 nm excimer-laser irradiation has been investigated by the time-of-flight method. The following positive ion species have been detected: F+, Sr+, Sr++, SrF++ and SrF 2 + . The Sr+ and SrF+ emission yields are found to increase as E n, where E represents the laser energy per pulse. The exponent n is related to defect-initiated neutral particle emission and gas-phase ionization. The influence of surface damage on this power dependence is investigated. The F+ emission yield showed a quite different behaviour compared to that of the Sr+ and SrF+ emission. At both wavelengths the total positive ion emission yields saturate at a certain laser energy. In the saturation regime the SrF+ emission vanishes and alternative emission of F+ and Sr+ was observed at both wavelengths, but the total emission yield in the saturation regime (F+ + Sr+) remained constant. A Scanning Electron Microscope (SEM) was used to investigate the damage spots after laser irradiation for thermal effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348167
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  • 8
    Electronic Resource
    Electronic Resource
    Nonlinear energy-selective nanoscale modifications of materials and dynamics in metals and semiconductors (1999)
    Springer
    Technical physics 44 (1999), S. 1069-1072 
    Details
    ISSN: 1090-6525
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Studies of nonlinear, energy-selective material interactions localized at surfaces, heterointerfaces, impurities, and defects in solids are described. Particular reference is made to a new molecular interaction effect caused by transfer of surface energy by low-energy collisions, a new noncontact nonlinear optical method of studying electron and hole dynamics at a heterointerface, and a new approach using a free-electron laser developed at Vanderbilt University to activate hydrogen-passivated dopants in silicon. In each case the unique characteristics of particle and photon beams, optimized for the technology, were used to extend the range of applications of these new energy-selective techniques to solve fundamental and applied problems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1259473
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