ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
This paper presents an investigation of the impact of a Highly Doped Drain (HDD)implantation after epitaxial deposition on Si1-xGex S/D junction characteristics. While the no HDDdiodes exhibit the usual scaling of the leakage current density with Perimeter to Area (P/A) ratio,this is not the case for the HDD diodes, showing a smaller perimeter current density JP for smallerwindow size structures, corresponding with larger P/A. This points to a lower density of surfacestates at the Shallow Trench Isolation (STI)/silicon interface, which could result from a lowercompressive stress. In order to examine the role of the HDD implantation damage, TransmissionElectron Microscopy (TEM) inspections have been undertaken, which demonstrate the presence ofstacking faults in small active SiGe regions. These defects give rise to local strain relaxation and,therefore, could be at the origin of the lower STI/Si interface state density. The window size effectthen comes from the active area dependence of the implantation defect formation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.95.pdf
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