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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 8384-8389 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High resolution low-energy electron diffraction, scanning tunneling microscopy (STM), and transmission electron microscopy (TEM) have been used to study the temperature dependence of a vicinal (stepped) Si(111) surface with a polar angle of 6° from (111) along an azimuth rotated about 10° away from the high symmetry [1¯1¯2] direction. At the (1×1) to (7×7) reconstructive transition, the kinks at the step edges precipitate into a phase with high step density and increased rotation from the [1¯1¯2] direction, leaving behind a [1¯1¯2] oriented phase with triple-layer height steps and (7×7) reconstruction. The inclination and azimuth of the orientation of the kinked phase change continuously with temperature. When the surface is cooled to room temperature, STM images confirm a coexistence between the [1¯1¯2] oriented step-tripling phase and the kinked phase. In the step-tripling phase, the steps are very straight (kinks are rare) and oriented in the [1¯1¯2] direction. There is a small fraction of single-layer height steps between the predominant triple-layer height steps. All the terraces in this phase are (7×7) reconstructed. In the kinked phase, steps with a high density of kinks are bunched together and rotated to a direction about 45° away from [1¯1¯2]. TEM images of the surface topography also confirm the phase coexistence on a macroscopic scale. This phase separation (azimuthal faceting) is reversible, and can be understood thermodynamically by analogy with phase separation in a two-component fluid.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 256-258 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial type B NiSi2 thin layers have been grown at room temperature on Si(111). Deposition of a few monolayers of nickel followed by codeposition of NiSi2 has led to the growth of high quality single-crystal layers, with ion channeling χmin 〈2%. No disorder was found at the interfaces of these layers. The topography of the original substrate has a predominant effect on the structure of line defects at the NiSi2 interface. Codeposition at room temperature on annealed silicide thin layers also led to the overgrowth of high quality NiSi2. These results are suggestive of type B NiSi2 formation on Si(111) upon deposition of a few monolayers of nickel at room temperature.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2075-2077 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial thin films of CoSi2(110) are grown for the first time on Si(110) surfaces using UHV template methods. Utilization of thin (10–15 A(ring)) room-temperature deposits, followed by annealing, eliminates the role of long-range diffusion during the reaction to CoSi2 and produces epitaxial thin films with a single, coherent orientation. These thin epitaxial films can then be used as templates for further homoepitaxial growth of silicide. The thicker films are also of a single epitaxial orientation and exhibit χmin's as low as 5% in Rutherford backscattering. Misfit in two orthogonal directions is taken up by two distinct sets of interfacial defects which appear to have different critical thicknesses.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2005-2007 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial growth of NiSi2 and CoSi2 on (100) and (110) surfaces is demonstrated at room temperature. Codeposition of stoichiometric silicide, by molecular beam epitaxy, onto thin, preannealed silicide layers on Si (100) and (110) leads to single-crystal growth. High quality NiSi2 and CoSi2 films with ion channeling χmin〈4% have been fabricated. The epitaxial orientation and the interfacial defect structures of the original silicide templates are maintained in the overgrown silicide. The high temperatures usually required for the formation of NiSi2 and CoSi2 are related to the nucleation and mass transport processes. It is concluded that the reaction of disilicide takes place at room temperature.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 852-854 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal type B CoSi2 thin layers have been grown on Si(111) by codeposition at room temperature. The existence of a good quality CoSi2 template layer on the surface prior to the codeposition is essential. This requirement can be satisfied by either an annealed CoSi2 thin layer or by a small amount of cobalt deposited at room temperature. The topography of the original substrate surface has a predominant effect on the structure of line defects at the CoSi2 interface formed at room temperature. Results obtained from transmission electron microscopy and Rutherford backscattering are presented.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 478-489 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and morphology of thin and ultrathin epitaxial NiSi2 layers on Si(100) grown by various techniques have been studied in detail. Very high-quality single-crystal NiSi2 layers have been grown on Si(100). Codeposition of stoichiometric NiSi2 at low temperatures followed by subsequent annealing at high temperatures (≥700 °C) has been shown to eliminate the most common problem for this epitaxial system, namely, faceting at the interface. Line defects, associated with interface roughness, were also greatly reduced in films grown by this method. Interfacial faceting and defects at interface domain boundaries appear to be related to the growth kinetics and are not due to energetic advantages, as previously thought. Discrete spots around the (01/2 1/2)-related reflections were observed by transmission electron diffraction from some planar NiSi2 layers, suggesting the existence of superstructures at portions of the NiSi2/Si interface. Low-energy electron diffraction indicated the existence of a highly ordered surface reconstruction for well-annealed films. Possible growth models, as well as the implications of possible structural inhomogeneity on interface electron transport measurements, are discussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7993-7993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is pointed out that, under most circumstances, current transport characteristics observed at Schottky barrier junctions cannot be used to unambiguously identify the mechanism responsible for electron conduction. This practice, however, is quite common and is shown to lead to an incorrect conclusion in a recent article [Z. Q. Shi and W. A. Anderson, J. Appl. Phys. 72, 3803 (1992)].
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 648-650 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of ultrathin (〈50 A(ring) thick) uniform CoSi2 layers at low temperatures (〈450 °C) has been reported recently. Pinholes are formed in these silicide layers when the temperature is raised to above ∼550 °C. An important driving force for the generation of pinholes has been identified as a change of the surface structure from CoSi2-C, stable at low temperature, to the high-temperature stable CoSi2-S. Treatment of the surface of CoSi2 facilitates this transition and prevents the formation of pinholes. A few important parameters in the silicide reaction are shown to govern the morphology of the reacted CoSi2 layers.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7820-7829 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)((square root of)3×(square root of)3)R30°–Ag, Si(100)2×1–Ag, and polycrystalline Ag/Si interfaces, using different doping levels for both n- and p-type silicon wafers. Our data strongly suggest that the Schottky barrier heights (SBHs) are spatially nonuniform. The distribution of local effective SBHs at the epitaxial interfaces is modeled by a summation of a single Gaussian, representing the spread in SBH for the majority of the contact, and two half-Gaussians which represent the high- and low-barrier tails of the full distribution. Despite the fact that the average SBHs of the epitaxial interfaces are hardly structure dependent, the SBH distributions are very broad and markedly different for each interface. The polycrystalline interfaces are characterized by a narrower SBH distribution centered at a substantially smaller mean. We argue that the electrical inhomogeneity is related to structural inhomogeneity at the interface which is a direct consequence of the kinetics and mode of growth of Ag on Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8250-8257 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, uniform, Si/NiSi2/Si(100) structures were demonstrated by a combination of molecular-beam epitaxy and postgrowth, high-temperature annealing. A Si template technique ensures the epitaxial orientation of the Si overlayer. The unusual inverse Volmer–Weber mode observed during the growth of Si on NiSi2(100) is shown to be a result of interface and surface energetics. The evolution of the interface morphology of the double-heteroepitaxial structures is discussed in terms of thermodynamics.
    Type of Medium: Electronic Resource
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