Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 724-726
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We report an in situ study of the molecular-beam epitaxy growth and annealing of Cu(001) films grown on hydrogen-terminated Si(001) substrates, resulting in a promising approach to achieve smooth epitaxial morphology. Using correlated reflection high-energy electron diffraction and scanning tunneling microscopy data, we find a temperature interval below the onset of silicide formation where a dramatic smoothening of the epitaxial Cu surfaces occurs. Our measurements indicate that a reduction in roughness is possible in this regime because the annealing is controlled by lateral diffusion kinetics. © 2000 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.125874
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