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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication and Morphological Stability of Aluminium Nanostructures En Route to Nanopatterned Sapphire (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 45 (Oct. 2006), p. 945-950 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: It has recently been demonstrated that it is possible to produce a pristine surface layer ona lapped sapphire substrate by depositing a thin film of aluminum and subjecting it to an appropriatethermal treatment. This process also shows promise for the fabrication of nanopatterned sapphireby pre-patterning the aluminum metal prior to thermal conversion to sapphire. We have exploredtwo distinct patterning processes: a dual layer photoresist e-beam lithography technique forfabricating arbitrarily shaped aluminum structures, and a novel, non-conventional mask-liftoffmethod involving nanoporous anodized aluminum oxide, useful for patterning very large scalearrays of sub-micron aluminum dots or posts. Our work is focused on refining the fabricationprocess and investigating the morphological stability of such metal nanostructures duringconversion to sapphire
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.45.945.pdf
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication of Pt-IrO〈sub〉x〈/sub〉 and Au-V〈sub〉2〈/sub〉O〈sub〉5〈/sub〉 Thin Films (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 345-346 (Aug. 2007), p. 735-740 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Pt-IrOx and Au-V2O5 thin films were created by magnetron co-sputtering from multipletargets in an Ar-O2 mixture. Successful Pt-IrOx production required high O2 partial pressure andslow deposition rate followed by post-annealing in pure O2. In contrast, deposition of Au-V2O5films required relatively low O2 partial pressure, and did not need any post-anneal. These differentstrategies for forming oxide dispersion strengthened films in a multi-target reactive sputteringconfiguration are directly related to the thermodynamic characteristics of the two materials systems.The most important characteristics are the low equilibrium oxygen solubility in Pt and Au, and thedifferent degrees of oxygen affinity by Ir and V
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.345-346.735.pdf
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    A Novel Capacitance Bulge Apparatus and Measurements of the Mechanical Properties of Al Thin Films Using It (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 345-346 (Aug. 2007), p. 745-748 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Thin metal films often play an important role as structural elements or reflective surfacesin MEMS applications. Mechanical properties of the films are important due to their influence onthe performance of MEMS devices that involve bending or stretching metal parts. In order to gain abetter understanding of the mechanical behavior of thin metal films, we have developed a novelbulge system and measured mechanical properties of aluminum thin films. The thin films wereprepared by e-beam evaporation of high purity Al onto 2 or 3mm ×12 mm rectangular siliconnitride membrane windows in silicon frames. N2 gas was used to pressurize and thus bulge themembranes. The bulge height was measured based on changes of capacitance between themembrane and a fixed, closely spaced electrode. This apparatus provides resolution ofapproximately 50 nm in bulge height at a data acquisition rate of 100/sec and provides strain ratesin the membrane up to 10-5/sec. The stability of the apparatus allows stress relaxation measurementsto be made to times of many hours. Time dependent elastic modulus changes of 1 [removed info]m Al films weremeasured over periods of times under constant stress
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.345-346.745.pdf
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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